Solid‐State Image Sensors

Fowler, Boyd

doi:10.1002/9781118798706.hdi006

Cited by 4 publications

(2 citation statements)

References 38 publications

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“…We measured it as the amount of modulation of a black and white sinusoidal pattern of a particular frequency f in cycles/pixel along concentric circles, and has a maximum of 1.0. We used a modified "Siemens star chart" method described in [19]. We recorded images from BSI DAVIS and FSI DAVIS with a 16mm lens and a 60W incandescent bulb for illumination and repeated the measurements with/without the Edmund 49801 IR cut filter (Fig.…”

Section: Modulation Transfer Function (Mtf)mentioning

confidence: 99%

Front and Back Illuminated Dynamic and Active Pixel Vision Sensors Comparison

Taverni

Moeys

et al. 2018

IEEE Trans. Circuits Syst. II

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Back side illumination has become standard image sensor technology owing to its superior quantum efficiency and fill factor. A direct comparison of front and back side illumination (FSI and BSI) used in event-based dynamic and active pixel vision sensors (DAVIS) is interesting because of the potential of BSI to greatly increase the small 20% fill factor of these complex pixels. This brief compares identically designed front and back illuminated DAVIS silicon retina vision sensors. They are compared in term of quantum efficiency (QE), leak activity and modulation transfer function (MTF). The BSI DAVIS achieves a peak QE of 93% compared with the FSI DAVIS, peak QE of 24%, but reduced MTF, due to pixel crosstalk and parasitic photocurrent. Significant "leak events" in the BSI DAVIS limit its use to controlled illumination scenarios without very bright light sources. Effects of parasitic photocurrent and modulation transfer functions with and without IR cut filters are also reported.

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Section: Modulation Transfer Function (Mtf)mentioning

confidence: 99%

Front and Back Illuminated Dynamic and Active Pixel Vision Sensors Comparison

Taverni

Moeys

et al. 2018

IEEE Trans. Circuits Syst. II

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“…This in turn increases the dynamic range of the sensor, which is a key figure of merit for many image sensor applications. Advantages of this technique include simplicity, large pixel fill factor, and excellent low light performance [6]. Conversely, it suffers from added temporal noise and a large pixel‐to‐pixel performance variation due to the fact that the overflow gate exploits its subthreshold region to drain the excess photocharge.…”

Section: Pixel Circuit For Well Capacity Adjustmentmentioning

confidence: 99%

TFET‐based well capacity adjustment in active pixel sensor for enhanced high dynamic range

Fernández-Berni

Niemier²,

Hu³

et al. 2017

Electron. lett.

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We present a Tunnel Field-Effect Transistor (TFET)-based pixel circuit for well capacity adjustment that does not require subthreshold operation on the part of the reset transistor. In CMOS, this subthreshold operation leads to temporal noise, distortion and Fixed Pattern Noise (FPN), becoming a primary limiting performance factor. In the proposed circuit, we exploit the asymmetric conduction associated with TFETs. This property, arising from the inherent physical structure of the device, provides the selective well adjustments during photo-integration which are demanded for achieving High Dynamic Range (HDR). A GaNbased heterojunction TFET has been designed according to the specific requirements for this application.

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Subwavelength Bayer RGB color routers with perfect optical efficiency

2022

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We introduce subwavelength color routers with perfect optical efficiency in a red-green-green-blue (RGGB) Bayer layout for solid state image sensors. This is the first demonstration of a subwavelength device concept that shows the full potential of color routing, i.e., perfect routing without loss of photons, with a broadband, polarization-independent, and angular robust response. As an example, we show a color router for 320 nm wide image sensor pixels, which are two times smaller than the smallest state-of-the-art pixels, that features perfect optical efficiency, i.e., no crosstalk between color channels, no reflections, and no leakage into non-photodetector regions, even though the pixel photodetectors are 2–3 times smaller than the wavelength of the incident light. Our color router outperforms all other color separation approaches and can replace the entire optical stack in solid state image sensors.

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Solid‐State Image Sensors

Cited by 4 publications

References 38 publications

Front and Back Illuminated Dynamic and Active Pixel Vision Sensors Comparison

Front and Back Illuminated Dynamic and Active Pixel Vision Sensors Comparison

TFET‐based well capacity adjustment in active pixel sensor for enhanced high dynamic range

Subwavelength Bayer RGB color routers with perfect optical efficiency

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