and with low trap-state densities. [ 3 ] This enabled the fabrication of perovskites solar cells that convinced the solar cell community with high performances such as power conversion effi ciencies of over 20%, [ 4,5 ] while offering the possibility for low cost production, e.g., by solution-processing. [ 6 ] Meanwhile, further device applications for organic-inorganic mixed halide perovskites have been discovered. For example, in 2014, low threshold levels for amplifi ed spontaneous emission showed that mixed halide perovskites can also be used for the facile fabrication of lasers with high quality factors. [7][8][9][10] Furthermore, it is known that most halide perovskite materials can exist in different crystal structures, depending on environmental conditions such as temperature. [11][12][13] Here, we show that a coexistence of tetragonal and orthorhombic phases within apparently the same crystalline grain can be optically induced into the halide perovskite CH 3 NH 3 PbI 3 at low temperatures, leading to amplifi ed spontaneous emission (ASE) simultaneously at two distinct wavelengths. The ASE feature associated with the (high temperature) tetragonal phase can be reproducibly written, read-out, and erased at 5 K by choosing appropriateThe photoluminescence in a lead halide perovskite is measured for different temperatures (5-300 K) and excitation fl uences (21-1615 µJ cm −2 ). It is found that amplifi ed spontaneous emission (ASE) is observed for an excitation density larger than about 1 × 10 18 cm −3 for both the tetragonal phase above 163 K and the orthorhombic phase below about 163 K. The fl uence that is required to obtain this excitation density depends on temperature and phase since the nonradiative decay of excitations is temperature activated with different activation energies of 85 20 ± and 24 5 meV ± for the tetragonal and orthorhombic phase, respectively. The ASE from the tetragonal phase-usually prevailing at temperatures above about 163 K-can also be observed at 5 K, in addition to the ASE from the orthorhombic phase, when the sample is previously exposed to a fl uence exceeding 630 µJ cm −2 at a photon energy of 3.68 eV. This additional ASE can be removed by mild heating to 35 K or optically, by exposing the sample by typically a few seconds with a fl uence around 630 µJ cm −2 . The physical mechanism underlying this optically induced phase transition process is discussed. It is demonstrated that this phase change can, in principle, be used for an all-optical "write-read-erase" memory device.