Solidification of GeSi solid solution in near-zero-G conditions

Reproducible Te-doped InSb experiments in Microgravity Science Glovebox at the International Space Station

“…Most microgravity data reveal evidence of some convective interference with segregation [4][5][6]8,9]. However, it remains unclear whether (a) convection was driven by minor density differences in the melt (caused by temperature or concentration differences) or (b) convection was driven by surface tension gradients on the free melt surface that may have formed due to de-wetting or bubbles.…”

“…In the past 30 years, diffusion controlled segregation has been a key goal in many semiconductor crystal growth experiments conducted in microgravity [3][4][5][6][7][8][9]. However, reproducible data have not been obtained.…”

Initial transient in Zn-doped InSb grown in microgravity

“…7 gives CS (x) / Co = 0.95 , which can be taken as the end of the initial transient and beginning of the uniform steady state segregation. Based on the above analysis, Zn-doped InSb is a suitable dopant for diffusion-controlled growth in microgravity, expected to yield a short initial transient followed by steady state.…”

“…and Sn-doped InSb (k=0.057). Zemskov et al [7][8][9] grew Te-doped and Zn-doped InSb. The segregation profiles of Zn-doped InSb were not reported.…”

Bulk growth of silicon-germanium solid solutions

“…A Si Ge crystallization experiment took place onboard the coupled Soyus-Apollo spaceships [42][43][44]. Homogeneous, single crystalline Si Ge-Sb rods prepared by CZ with replenishment containing 1 at % Si and 0.01 at % Sb were partly remelted in a closed ampoule.…”