Solubility and Diffusion Coefficient of Oxygen in Silicon

Itoh, Youichi; Nozaki, Tadashi

doi:10.1143/jjap.24.279

Cited by 58 publications

(28 citation statements)

References 15 publications

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“…The following techniques are considered as direct measurements of oxygen concentration in Si: secondary ion mass spectrometry (SIMS)(3-7), charged particle activation (CPA) (8,9), and infrared absorption (IR). (10)(11)(12)(13) The first two techniques have the sensitivity to determine depth profiles, from which both diffusivities and solubilities can be obtained; impurity distributions from in-diffusions are described by C(x,t) = Co erfc (x/2lt) and out-diffusions of supersaturated CZ Si by C(x,t) = Co + (C, -Co) erf (x/2VDt), where Co is the equilibrium solubility (observed at the surface of the Si crystal) and D and t are diffusivity and time, respectively.…”

Section: Direct Methods Of Measuring 0 In Simentioning

confidence: 99%

The Diffusivity and Solubility of Oxygen in Silicon

Mikkelsen

1985

MRS Proc.

149

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The diffusivity and solubility are two key parameters required for understanding and modeling the behavior of oxygen in silicon. This paper gives an up to date review of experimental determinations of these parameters, including some recent unpublished data. There is very good agreement within the long-range diffusivity results determined by secondary ion mass spectrometry (SIMS), charged particle analysis (CPA), and x-ray diffraction. The oxygen diffusivity is independent of [0], orientation, ambient, or crystal doping. The data also extrapolate well to the diffusivities obtained by the intrinsic oxygen atomic hop frequency at low temperature to give a combined expression of D = 0.13 exp(-2.53eV/kT) cm 2 s-1 . There is somewhat poorer agreement on the solubility measurements, in part due to inconsistent calibration factors and the observation of a processing-dependent extrinsic oxygen solubility. The intrinsic solubility derived from SIMS, CPA, and infrared absorption is described by [0] = 9E22 exp (-1.52 eV/kT) cm-3 . Finally, the above diffusivity and solubility parameters are compared to modeling of oxygen related phenomena in silicon, such as thermal donor and precipitate formation kinetics, and interaction with point defects during the relaxation of stress-aligned dichroism.

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Section: Direct Methods Of Measuring 0 In Simentioning

confidence: 99%

The Diffusivity and Solubility of Oxygen in Silicon

Mikkelsen

1985

MRS Proc.

149

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“…[29][30][31][32] From the above considerations, it can safely be concluded that h 4 is larger than 4.7 eV, the more reliable value being 5.9 or 6 eV.…”

Section: Formation Energy Of Oxygen Vacancies In Siomentioning

confidence: 99%

Thermodynamic analysis of hole trapping in SiO2 films on silicon

Boureau

Carniato

Capron

et al. 2001

Journal of Applied Physics

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“…The uncertainties in the converted value of O i concentrations (Fig. 2) are possible to occur due to possible errors in the data treatment and the effect of wafer's surface on the peak height is high especially for the thin wafers (o500 mm thick) [18].…”

Section: Resultsmentioning

confidence: 99%

The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon

Arivanandhan

Gotoh

Fujiwara

et al. 2011

Journal of Crystal Growth

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a b s t r a c tThe intensity of the infrared absorption band at 1107 cm À 1 , related to interstitial oxygen (O i ) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZ-Si crystals. In contrast, the number of precipitates observed on the etched surfaces of CZ-Si wafers increased as the Ge concentration increased. From an energy dispersive X-ray (EDX) analysis, O was observed to be one of the major components of the precipitates. Moreover, Ge was found as one of the components in the precipitate observed on the heavily Ge (4 1 Â 10 18 cm À 3 ) codoped CZ-Si wafers. These results suggest that the grown-in O precipitates increase as the O i concentration decreases when the Ge concentration increases in the Si crystal. The Ge-vacancy (V) complex in the Si lattice probably acted as a heterogeneous nucleation center and may enhanced the grown-in O precipitates thereby reducing the dissolved O i concentration in the Si lattice.

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Solubility and Diffusion Coefficient of Oxygen in Silicon

Cited by 58 publications

References 15 publications

The Diffusivity and Solubility of Oxygen in Silicon

The Diffusivity and Solubility of Oxygen in Silicon

Thermodynamic analysis of hole trapping in SiO2 films on silicon

The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon

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