Soluble poly(4-fluorostyrene): a high-performance dielectric electret for organic transistors and memories

Zhu, Yuanwei; Fan, Yongkang; Li, Shengtao; Wei, Peng; Li, Dongfan; Liu, Bo; Cui, Dongmei; Zhang, Zhicheng; Li, Guochang; Nie, Yongjie; Lu, Guanghao

doi:10.1039/d0mh00203h

Cited by 37 publications

(37 citation statements)

References 72 publications

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“…5). Therefore, higher operational voltage is required to drive the into insulators under gate electric field 31 . On special occasions such as in the case of quantum well-like heterojunction, holes are transferred from p-type semiconductor to n-type semiconductor under gate electric field.…”

Section: Resultsmentioning

confidence: 99%

Organic N-type Electrets for Field-effect Transistors, Photo Memories and Artificial Synapses

Qin

et al. 2021

Preprint

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Electrets, typically referring to insulator materials with permanently-trapped charges, are widely used for electronic devices, actuators and medical filtering. Here, organic n-type electrets, generated from oxygen-degraded n-type semiconductors, are proposed as photo-induced electrets. The sheet charge densities of such n-type electret films, as high as 7.47 × 1012 cm-2, are used to provide steady built-in electric field to significantly improve the performance of organic field-effect transistors (OFETs). For example, OFETs made of p-type semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), in combination with n-type electret N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (C8-PTCDI), show a hole field-effect mobility 13.3 cm2·V−1·s−1, along with a memory window over 100 V, a memory on/off ratio 106 and a stable retention life time over one month in ambient air. Subsequently, the generality of n-type electrets for transistors and photo memories applications are demonstrated. Furthermore, OFETs with organic n-type electrets are employed in artificial synapse, and the recognition rate of brain-inspired neuromorphic computing is 65%.

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Section: Resultsmentioning

confidence: 99%

Organic N-type Electrets for Field-effect Transistors, Photo Memories and Artificial Synapses

Qin

et al. 2021

Preprint

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“…PS, soluble as well as low cost, is featured into a quality thin film to be used to trap the electrons. Once the electrons injected from the source and drain electrodes is trapped, these electrons can be stored in PS for a relatively long time [15], which is the socalled polymer electret. The electret provides a built-in field to accumulate the holes within C 12 -BTBT, which increases hole concentrations and further improves the OFETs performance.…”

Section: Resultsmentioning

confidence: 99%

“…The gold source and drain electrodes (40 nm) were deposited using a shadow mask (< 10 -4 Pa, 0.5 Å s -1 ) with a channel length (L) of 300 μm and a channel width (W) of 3000 μm. The total capacity (C total ) per unit area of 10 nm PS coated 300 nm SiO 2 is 10.94 nF cm -2 , calculated by 1/C total = (1/C SiO2 +1/C PS ), C SiO2 = 11.5 nF cm -2 , C PS = 0•  ps /d, and  ps =2.55 [15].…”

Section: A Materials and Device Fabricationmentioning

confidence: 99%

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Zhu

Wei

et al. 2020

IEEE Electron Device Lett.

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Chemical doping is widely used in the electronic devices. In p-type semiconductor thin films, oxygen doping fills the hole traps and increases hole concentrations, improving the performance of the organic field-effect transistors (OFETs). Due to the low ionization potential for p-type semiconductors, the superfluous holes induced by the oxygen doping degrades the OFETs off-state leakage performance. On the other hand, for ptype semiconductors with high ionization potential (up to 5.5-6.0 eV), the limited oxidation of oxygen is hard to achieve satisfactory doping concentrations to fill the trap states. This refers to the wellknown intrinsic incompatibility between the oxygen doping and high-performance OFETs. Herein, a novel strategy is introduced to overcome the incompatibility and achieve high-performance OFETs by using the structural polymer electret. That is, moderate hole concentrations induced by low-pressure (30 Pa) oxygen plasma fill the hole traps within semiconductor. And the built-in field resulted from polymer electret accumulates the holes inside semiconductor near the semiconductor/electret interface, thus improving the OFETs performance. Using a model organic semiconductor with high ionization potential-2,7didodecyl[1]benzothieno[3,2-b][1]benzothiophene (C12-BTBT) as an example, the high-performance OFETs with field-effect mobility (μFET) of 3.5 cm 2 V-1 s-1 , subthreshold-swing (SS) of 110 mV decade-1 , on-off ratio of 10 4 , and widely-tunable threshold voltage (Vt) are realized at a low voltage below 2 V in the open air.

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“…Massive applications of polymer electrets require a well control over charge retention capacity because the charges trapped in the polymer materials should generate electrostatic field for tens of years 119 . However, in practical application, the polymer electrets have to face harsh environments (e.g., air, high temperature, and humidity), leading to a quick decay of charge population during its shelf‐life 120,121 . The discharge behaviors have been discussed in the literature and attributed to surface charge neutralization caused by ions attracted from the air or the charge transport and diffusion within the electret materials 122–124 .…”

Section: Charge Retention Capacitymentioning

confidence: 99%

Polymer electrets and their applications

Wang

et al. 2020

J of Applied Polymer Sci

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Polymer electrets have revealed great potential application in electromechanical devices because of the low weight, large quasi‐piezoelectric sensitivity, and excellent flexibility. For an electret, a permanent and macroscopic electric field exists on the surface, principally led by a macroscopic electrostatic charge on the surface or a net orientation of polar groups inside the object. Here, progress in the development of polymer electrets is reviewed. After a brief retrospect of the research courses and those typical polymer electrets that are classified into fluorine polymer and nonfluorine polymer, we present a survey on the charging methods, including corona, soft X‐ray, contact, thermal and monoenergetic particle beams. The latest representative applications (i.e., power harvesting, sensors, field effect transistors, and biomedicine) based on polymer electrets are also summarized. Finally, we complete this review with a discussion on perspectives and challenges in this field.

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Soluble poly(4-fluorostyrene): a high-performance dielectric electret for organic transistors and memories

Abstract:
Poly(4-fluorostyrene) with strong charge storage capability is introduced as an electret in a field-effect transistor to improve device performance and memory stability.

Cited by 37 publications

References 72 publications

Organic N-type Electrets for Field-effect Transistors, Photo Memories and Artificial Synapses

Organic N-type Electrets for Field-effect Transistors, Photo Memories and Artificial Synapses

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Polymer electrets and their applications

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Soluble poly(4-fluorostyrene): a high-performance dielectric electret for organic transistors and memories

Abstract: Poly(4-fluorostyrene) with strong charge storage capability is introduced as an electret in a field-effect transistor to improve device performance and memory stability.

Cited by 37 publications

References 72 publications

Organic N-type Electrets for Field-effect Transistors, Photo Memories and Artificial Synapses

Organic N-type Electrets for Field-effect Transistors, Photo Memories and Artificial Synapses

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Polymer electrets and their applications

Contact Info

Product

Resources

About

Abstract:
Poly(4-fluorostyrene) with strong charge storage capability is introduced as an electret in a field-effect transistor to improve device performance and memory stability.