Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

Abstract

Silicon thin films that fulfil the needs of current semiconductor lithography were prepared from a new class of polycyclosilane–polysiloxane hybrid materials.

New Condensation Polymer Precursors Containing Consecutive Silicon Atoms—Decaisopropoxycyclopentasilane and Dodecaethoxyneopentasilane—And Their Sol–Gel Polymerization

“…29 Si CP/MAS NMR study of the xerogels indicated that a partial oxidative cleavage of the Si–Si bonds in cyclopentasilane and neopentasilane occurred during the sol–gel process. The structural features—a hybrid of Si–Si and Si–O–Si bonds—might provide a new optical property since consecutive silicon bonds absorb UV-visible light [14], and porous silica shows photoluminescence. The mixing of different skeletal bonds—Si–O–Si in an insulator and Si-Si in a semiconductor—provided interesting thermal and electrical conductivity.…”

“…Quite recently, our group found interesting reactivities of peralkoxy-, perchlorocyclopentasilane, and perchloroneopentasilane: (i) Si–Si bond breaking of a soluble polymer synthesized from decaethoxycyclo penta silane with methyltrimethoxysilane occurred even at one minute-baking conditions (200 °C) [14], while a polymer obtained from hexaethoxyhexamethylcyclo hexa silane with methyltrimethoxysilane was thermally stable; (ii) adding a secondary amine into decachlorocyclopentasilane and dodecachloroneopentasilane [15] induced Si–Si bond cleavages [16,17,18,19,20]. The interesting cleavage reactivity of the consecutive silicon bonds in the oligosilanes and the lack of study on the sol–gel process of peralkoxyoligosilanes prompted us to study their sol–gel reaction.…”