2007
DOI: 10.1016/j.actamat.2007.06.039
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Solute–vacancy binding in aluminum

Abstract: Previous efforts to understand solute-vacancy binding in aluminum alloys have been hampered by a scarcity of reliable, quantitative experimental measurements. Here, we report a large database of solute-vacancy binding energies determined from first-principles density functional calculations. The calculated binding energies agree well with accurate measurements where available, and provide an accurate predictor of solute-vacancy binding in other systems. We find: (i) some common solutes in commercial Al alloys … Show more

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Cited by 374 publications
(162 citation statements)
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“…This result implies that Mg-vacancy has a larger binding energy than Si-vacancy. This conclusion, however, completely disagrees with the theoretical calculations for the solute-vacancy binding energy in aluminum [19]. The subtracted ν t values of Al-0.5%Mg samples at low temperatures confirm that muon were trapped in a shallow electrical potentials produced by dissolved Mg atoms.…”
Section: Resultscontrasting
confidence: 49%
“…This result implies that Mg-vacancy has a larger binding energy than Si-vacancy. This conclusion, however, completely disagrees with the theoretical calculations for the solute-vacancy binding energy in aluminum [19]. The subtracted ν t values of Al-0.5%Mg samples at low temperatures confirm that muon were trapped in a shallow electrical potentials produced by dissolved Mg atoms.…”
Section: Resultscontrasting
confidence: 49%
“…Nearest-neighbor binding energies correlate with pEN, showing it is mainly controlled by electronic factors. The next-nearest neighbor binding does not correlate with pEN while previous calculations have shown that it correlates with misfit volume indicating control by mechanical factors 25 . The results in Figure 4 show that next-near-neighbor binding is much weaker than nearest-neighbor binding 25 .…”
Section: Ivb Vacancy/solute Binding Energiesmentioning
confidence: 66%
“…Computed solute-vacancy binding energies here (Table 1) and elsewhere 9,11,25 reveal Sn to be useful for "diffusion on demand" in Al, with possible applicability of Y (Table 1). Literature computations for In suggest it as another attractive candidate for (∆E VS = -0.2 eV) 25 . Prospects for Al-6xxx are limited, but the few viable solutes provide the desired performance.…”
Section: Discussionmentioning
confidence: 99%
“…The effect gets smaller with more solute and with higher vacancy affinity of the solute elements. It has been demonstrated that vacancy binding energies generally increase with atom size, however not without exception [14]. The elements used in Wolverton's work [14] have vacancy binding energies increasing as Mg, Si, Ag and Ge.…”
Section: Introductionmentioning
confidence: 99%
“…It has been demonstrated that vacancy binding energies generally increase with atom size, however not without exception [14]. The elements used in Wolverton's work [14] have vacancy binding energies increasing as Mg, Si, Ag and Ge. A higher solute-vacancy binding corresponds with a higher probability of one or more nearby vacancies.…”
Section: Introductionmentioning
confidence: 99%