Solution-based spin cast-processed O-shaped memory devices

Ramana, Ch. V.; Chandra, S. V. Jagadeesh; Dubey, R.S.; Rao, B. Eswara

doi:10.1007/s10854-020-04990-4

Cited by 1 publication

(2 citation statements)

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“…The cleaning procedure of Indium tin oxide coated glass substrate has been explained elsewhere. 1 The MEHPPV and nanoparticles of ZnO have been procured from Sigma Aldrich to fabricate a tri-layer structure consisting of organic-inorganic-organic (MEHPPV/ZnO/MEHPPV) on top of the Indium tin oxide coated glass substrates as shown in Figure 1 and the fabricated devices measured 1 cm 2 . The MEH-PPV and ZnO nanoparticles were distilled in standard chemical that is toluene (0.5 wt%) separately.…”

Section: Device Fabricationmentioning

confidence: 99%

“…The organic materials have potential aspirant for future device applications. 1,2 For example, light-emitting diodes, [3][4][5][6] transistors, [7][8][9][10] photo voltaic cells, [11][12][13][14][15] and switches, [16][17][18][19][20] have been realized. However, one of the important electronic devices is memory which will provide or store the information for logic operation.…”

Section: Introductionmentioning

confidence: 99%

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Low-voltage, solution-processed, two-terminal organic bistable memory device

Ramana¹,

Dubey²

2022

Proceedings of the Institution of Mechanical Engineers, Part E:

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An low-voltage, solution-based spin cast-processed two-terminal bi-stable memory device was fabricated by using organic-inorganic-organic tri-layer structure (MEHPPV/ZnO/MEHPPV) onto indium tin oxide coated glass. Tri-layer device structure displayed the significant switching characteristics. The absence of degradation after 1 h retention test at 120 °C was noticed. The consistent memory behavior was noticed even after 50 cycles. Electron tunneling mechanism was utilized for describing switching mechanism of the device. The result emphasizes that the class of memory devices have been fabricated with organic-inorganic-organic nanocomposites, which has led to considerable research and development efforts to the scene of latent applications.

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Section: Device Fabricationmentioning

confidence: 99%