Solution-Based Synthesis of Oxide-Free MoS2 Film: Exploring Interface Mechanisms
Md Iftekharul Alam,
Rikiya Sumichika,
Junichi Tsuchimotoi
et al.
Abstract:We report a solution-based approach for the synthesis of oxidation-free MoS2 films, focusing on interface mechanisms. Through a sulfurization-free solution process and single-step annealing, the oxidation-free MoS2 film is successfully prepared on Si3N4 surfaces, showing improved uniformity with a surface roughness below 0.5 nm and a thickness of 4 nm at a precursor solution concentration of 30 mM, annealed between 700 and 800ºC. The MoS2 films exhibit a hexagonal lattice structure with crystallographic orient… Show more
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