Solution growth of Indium-Doped silicon

Na–Si binary phase diagram and solution growth of silicon crystals

“…The melt growth of Si crystal expends much thermal energy because of the high melting point of Si at 1414 • C [13]. It has been reported that metals having a low melting point, such as Ga [16], In [17], and Al [18,19] were used as solvents and Si crystallized from the metal solutions. However, Ga and In metals are expensive, and it is difficult to remove Ga, In, and Al from the products.…”

Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals

“…2 maximum solubility data extracted from Fig. 1 are plotted versus k. Relevant literature data for equilibrium conditions 1,10 and SPER ͑Refs. 2 and 3͒ and full-melt laser 4 anneals are also included.…”

High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature

“…In the case of GaSb layers, a low growth temperature was reported to reduce impurities in the layers but to degrade the structural quality. 5) However, in the case of silicon, there are few works 6) on LPE growth carried out at largely different growth temperatures to evaluate the effect of this parameter.…”