Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors

Gao, Yana; Xu, Yueyang; Lü, Jianguo; Zhang, J. H.; Li, X. F.

doi:10.1039/c5tc02485d

Cited by 25 publications

(11 citation statements)

References 47 publications

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“…One of the potential approaches to solve this problem is to synthesize ternary oxide alloys, which are formed by combining two dielectrics, one of which provides a high dielectric constant whereas the other one has a high band gap, thereby minimizing the electrical leakage. Several ternary oxides such as AlPO, AlNaO, TaSrO, AlZrO, HfLaO, HfSiO, MgTiO, LaAlO, and yttrium aluminum oxide (YAlO x ) have been investigated, and high‐performance oxide TFTs utilizing these dielectrics have been demonstrated.…”

Section: Electrical Properties Of Solution‐processed Yalox Dielectricsmentioning

confidence: 99%

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Bolat

Fuchs

Knobelspies

et al. 2019

Adv Elect Materials

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stability when compared to their counterparts. [4] Currently existing technologies for commercial applications of TFTs use vacuum-based deposition methods and photolithographic patterning of the layers to ensure a high manufacturing yield.Due to the availability of inexpensive precursors, ease of fabrication, and applicability for large-area processing, solutionprocessed methods may offer low-cost routes for the manufacturing of oxidebased TFTs. [5] Specifically, printing offers an advantage by eliminating the necessity of photolithographic patterning of the deposited layers. However, there are still several challenges before the realization of flexible electronics based on printed oxides, and one of them is the requirement of a hightemperature post deposition annealing (PDA) of the printed layers. [6] To reduce the PDA temperature of the solution-processed layers, several methods such as deep ultraviolet (DUV) annealing, [7][8][9] flash lamp annealing, [10,11] microwave annealing, [12] and solution combustion synthesis [13][14][15][16] have been proposed for semiconductor, conductor, and dielectric layers. DUV annealing (annealing method in this study) is based on the absorption of the deep UV light (λ < 260 nm) by the precursors used in the solution-processed deposition resulting in their decomposition into active oxide layers. DUV has been demonstrated to be applicable not only to oxide dielectrics but also to the semiconductors such as indium oxide, IGZO, and indium zinc oxide. [8] As a major component of the TFT, the dielectric layer is crucial for achieving high-performance devices. The effective polarization of charges in the dielectric under the applied gate bias directly affects the amount of charges accumulated/ depleted in the channel material, which in turn indicates the switching performance of the transistor. Up to now, the majority of low-temperature solution-processed dielectric layers have been reported using spin coating methods, aiming at uniform and pinhole-free layers. [17] Several binary oxide dielectrics with high dielectric constants (high-κ) such as AlO x , YO x , HfO x , and ZrO x have been investigated for their use in oxide TFTs, and the devices with higher mobilities and lower threshold voltages rather than the devices employing SiO 2 insulators Recent developments in inkjet printing have proven it a viable method for low-cost and large-area coating of oxide materials. The main drawback of this method is the common requirement of a post-deposition annealing (PDA) of the printed layers at relatively high temperatures (T > 200 °C). This sets a requirement for the substrate to have high glass transition temperature (T g ). Toreduce the PDA temperature, deep-ultraviolet (DUV) annealing is proposed as an effective method. In this study, yttrium aluminum oxide (YAlO x ) dielectrics are realized for application in flexible electronic devices via inkjet printing and DUV annealing at a temperature of 150 °C. The effect of the Y concentration on the electrical properties of the dielectrics is i...

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Section: Electrical Properties Of Solution‐processed Yalox Dielectricsmentioning

confidence: 99%

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Bolat

Fuchs

Knobelspies

et al. 2019

Adv Elect Materials

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show abstract

“…As a basic unit, thin-film transistors (TFT) play an important role in displays [1][2][3][4][5], and the dielectric layer is the key for the TFT's electrical stability [6][7][8][9]. Due to their good transmittance, high dielectric constant and low temperature preparation, amorphous metal oxide dielectric layers have attracted widespread attention [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

et al. 2020

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In this paper, zirconium-aluminum-oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtained by spin-coating the mixed precursor. The chemical and physical properties of the films were measured by thermogravimetric differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and a UV spectrometer. It is observed that the oxygen defects and the hydroxide in the films are reduced with the addition of high-bond-energy zirconia, while the films can remain large optical bond gaps thanks to the presence of alumina. The metal-insulator-metal (MIM) devices were fabricated, and it was seen that with a molar ratio of Zr:Al = 3:1 and an annealing temperature of 500 • C, the dielectric layer afforded the highest dielectric constant of 21.1, as well as a relatively low leakage current of 2.5 × 10 −6 A/cm 2 @ 1 MV/cm. Furthermore, the indium-gallium-zinc oxide thin-film transistors (IGZO-TFTs) with an optimal ZAO dielectric layer were prepared by the solution method and a mobility of 14.89 cm 2 /Vs, and a threshold voltage swing of 0.11 V/dec and a 6.1 × 10 6 on/off ratio were achieved at an annealing temperature of 500 • C.

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“…Hafnium silicate (HfSi x O y ) layers can be considered an appropriate candidate to be used as active matrix flat panel displays due to their high carrier mobility, optical transparency and electrical stability [18]. Aluminium silicate (AlSi x O y ) is a refractory compound with good chemical stability that can be used as corrosion and wear-resistant coating for metals and other materials [19].…”

Section: Introductionmentioning

confidence: 99%

Properties of Hafnium and Aluminium Silicates Coatings Obtained by PLD

Sirjita¹,

Rusen²,

Brajnicov³

et al. 2021

Coatings

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We report on the deposition and characterization of hafnium silicate and aluminium silicate thin films for different applications in optics and electronics. Pulsed laser deposition in a controllable oxygen atmosphere was used as a processing technique, with optimized parameters in terms of laser wavelength, laser fluence and oxygen pressure. The thin films were investigated using atomic force microscopy, spectroscopic ellipsometry, UV–VIS spectroscopy and X-ray photoelectron spectroscopy. The morphological investigations evidenced uniform layers with low roughness (in the order of nanometres). The optical investigations revealed that aluminium silicate layers with low roughness and low absorption in the infrared (IR) range can be obtained at high substrate temperatures (600 °C). The behaviour of the silicate thin films with respect to the nanosecond IR laser irradiation revealed that aluminium silicate layers have higher laser-induced damage threshold values in comparison with hafnium silicate.

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Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors

Cited by 25 publications

References 47 publications

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Properties of Hafnium and Aluminium Silicates Coatings Obtained by PLD

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Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors

Cited by 25 publications

References 47 publications

Inkjet‐Printed and Deep‐UV‐Annealed YAlOx Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Inkjet‐Printed and Deep‐UV‐Annealed YAlOx Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Properties of Hafnium and Aluminium Silicates Coatings Obtained by PLD

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Product

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Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates

Inkjet‐Printed and Deep‐UV‐Annealed YAlO_x Dielectrics for High‐Performance IGZO Thin‐Film Transistors on Flexible Substrates