Solution processable high quality ZrO₂dielectric films for low operation voltage and flexible organic thin film transistor applications

Abstract

Low temperature fabrication of high quality dielectric films for high performance flexible electronics is still a big challenge. In this work, we realized low temperature fabrication of high quality amorphous ZrO2 dielectric films via a low-cost solution process. The microstructure and electrical properties, as well as the electronic structures of solution processed ZrO2 films have been investigated systematically. The ZrO2 films with 160 °C annealed showed a low leakage current (3.6 × 10−5 A cm−2 at −3 V) and a high band gap (5.4 eV). The flexible organic thin film transistor (OTFT) made by using the solution-processed amorphous ZrO2 dielectric shows a low operation voltage of 4 V and a high drain current on/off ratio of 2.4 × 105. The frequency response of the ZrO2-OTFT device is up to 51.8 KHz under a low gate voltage of −3 V. Our work demonstrated that a solution processable ZrO2 film is promising for applications in future low power consumption and wearable flexible electronic devices.

Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics

“…Ultrathin organic polymer films or self‐assembled monolayers are usually used as interfacial modification layers . In the case of ultrathin polymer films prepared by solution spin coating, these must be perfectly deposited on the surface‐activated gate dielectric layer . In addition, hydroxylation of the deposited dielectric surface is also essential for self‐assembly of the monolayer .…”

“…For determination of surface reactive groups and hydroxyl groups, we utilized XPS analysis . From the XPS data (see Figure S2, Supporting Information), it was determined that the proportion of MOH binding states is only ≈12.5% for the thermal‐La 2 O 3 films, which is significantly lower than the value of ≈74.7% for DUV‐La 2 O 3 films.…”

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

“…In addition, there are reports on the application of ZrO 2 doped polymer modified thin films in the dielectric gate of metal oxide thin film transistor (MOTFT) [69,70] (Figure 7b) and organic thin film transistor (OTFT) [67,71,72] (Figure 7c). Among them, many of these hybrid materials can be obtained by the sol-gel method, which is a solution, low-temperature process compatible with deposition on large-area substrates.…”

Various Coating Methodologies of WO3 According to the Purpose for Electrochromic Devices

“…Solution-processable electronic materials have attracted considerable attention in a range of optoelectronic fields, such as displays [ 1 , 2 , 3 ], thin-film transistors [ 4 , 5 , 6 ], and sensors [ 7 , 8 , 9 ]. This is because their processing advantages (e.g., roll-to-roll [ 10 , 11 , 12 ] and several printing processes [ 13 , 14 , 15 , 16 ]) make it possible to commercialize low-cost and large-area optoelectronic devices.…”