Solution-Processable Molecular Oxides for Integrated Memories

Monakhov, Kirill Yu.; Moors, Marco; Vogelsberg, Eric; Lorenz, Julia; Warneke, Jonas; Yang, Fangshun

doi:10.1109/iitc/mam57687.2023.10154863

Cited by 5 publications

(8 citation statements)

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“…1b and c), the bis(trisalkoxo)-ligated Lindqvist-type hexavanadates 55 with octahedrally coordinated vanadium( v ) centres and the tubular dodecavanadate cages composed of square-pyramidal VO 5 5− groups (one lacunary position is covalently blocked by a lanthanide (Ln) phthalocyanine moiety 56 ) have emerged to be promising polyoxometalate (POM) candidates for molecular charge- and resistance-based memories. 57,58 These ion species show unprecedented physical multi-state switching at the level of single molecules 59,60 as well as thin films 61 in response to an external potential-induced electrical field of a scanning tunneling microscope (STM) tip. As soluble compounds, these polyoxovanadates can be processed from solution to the gas phase 62 and onto surfaces.…”

Section: Oxides and Oxo Complexes Of Vanadiummentioning

confidence: 99%

Oxovanadium electronics for in-memory, neuromorphic, and quantum computing applications

Monakhov

2024

Mater. Horiz.

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Section: Oxides and Oxo Complexes Of Vanadiummentioning

confidence: 99%

Oxovanadium electronics for in-memory, neuromorphic, and quantum computing applications

Monakhov

2024

Mater. Horiz.

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Section: Information Storagementioning

confidence: 99%

“…However, the poor chemical and mechanical stability, specific working conditions (e.g., low temperatures), and the gigantic challenge of how to deposit and contact molecular components in the CMOS devices, are strictly hampering the applications of molecular switching components in real‐world devices. [ 74 ] POMs have capabilities to develop optimum contact with the electrode and thus empower CMOS‐compatible interfaces. [ 60 ] On the basis of research advances, it can be concluded that POMs possess distinct architectural features of processability, tunable bandgap, excellent flexibility, and so on.…”

Section: Outlook and Future Perspectivesmentioning

confidence: 99%

“…c) Facile solution‐processable strategies are needed to anchor molecular components in the CMOS devices, in order to accelerate the applications of molecular switches in real‐world devices. [ 74 ] In addition, more efforts are needed to investigate the compatibility of lab‐produced devices with CMOS. In other words, further applications of POM‐based RRAM devices are anticipated.…”

Section: Outlook and Future Perspectivesmentioning

confidence: 99%

“…Under the influence of an external electric potential, metal atoms of POMs, redox‐active centers, accept electrons, and undergo stepwise reduction process (e.g., vanadium V v to V iv ), causing an increase in the electrical conductance. [ 74 ] Furthermore, the delocalized d‐electrons modulate the d‐band center ( ε d ) near the Fermi level ( E F ) and thus perform E F engineering in POM frameworks, [ 33a,b ] which, in turn, regulates (i) the adsorption strength of intermediates for electrocatalytic reactions, [ 33a ] and (ii) the electron transfer from the metal electrodes to the lowest unoccupied molecular orbital (LUMO) of POMs for resistive switching memory devices. [ 75 ] In this way, the electron sponge nature of POMs enables potential‐induced variation in the electronic structures towards high‐performance electrocatalysis and multibit data storage.…”

Section: Electron‐sponge Nature Of Pomsmentioning

confidence: 99%

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Electron‐Sponge Nature of Polyoxometalates for Next‐Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices

Ahmad,

Wang

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Designing next‐generation molecular devices typically necessitates plentiful oxygen‐bearing sites to facilitate multiple‐electron transfers. However, the theoretical limits of existing materials for energy conversion and information storage devices make it inevitable to hunt for new competitors. Polyoxometalates (POMs), a unique class of metal‐oxide clusters, have been investigated exponentially due to their structural diversity and tunable redox properties. POMs behave as electron‐sponges owing to their intrinsic ability of reversible uptake‐release of multiple electrons. In this review, numerous POM‐frameworks together with desired features of a contender material and inherited properties of POMs are systematically discussed to demonstrate how and why the electron‐sponge‐like nature of POMs is beneficial to design next‐generation water oxidation/reduction electrocatalysts, and neuromorphic nonvolatile resistance‐switching random‐access memory devices. The aim is to converge the attention of scientists who are working separately on electrocatalysts and memory devices, on a point that, although the application types are different, they all hunt for a material that could exhibit electron‐sponge‐like feature to realize boosted performances and thus, encouraging the scientists of two completely different fields to explore POMs as imperious contenders to design next‐generation nanodevices. Finally, challenges and promising prospects in this research field are also highlighted.

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Beyond Flexible: Unveiling the Next Era of Flexible Electronic Systems

Kim,

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Flexible electronics are integral in numerous domains such as wearables, healthcare, physiological monitoring, human–machine interface, and environmental sensing, owing to their inherent flexibility, stretchability, lightweight construction, and low profile. These systems seamlessly conform to curvilinear surfaces, including skin, organs, plants, robots, and marine species, facilitating optimal contact. This capability enables flexible electronic systems to enhance or even supplant the utilization of cumbersome instrumentation across a broad range of monitoring and actuation tasks. Consequently, significant progress has been realized in the development of flexible electronic systems. This study begins by examining the key components of standalone flexible electronic systems–sensors, front‐end circuitry, data management, power management and actuators. The next section explores different integration strategies for flexible electronic systems as well as their recent advancements. Flexible hybrid electronics, which is currently the most widely used strategy, is first reviewed to assess their characteristics and applications. Subsequently, transformational electronics, which achieves compact and high‐density system integration by leveraging heterogeneous integration of bare‐die components, is highlighted as the next era of flexible electronic systems. Finally, the study concludes by suggesting future research directions and outlining critical considerations and challenges for developing and miniaturizing fully integrated standalone flexible electronic systems.

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Solution-Processable Molecular Oxides for Integrated Memories

Cited by 5 publications

References 0 publications

Oxovanadium electronics for in-memory, neuromorphic, and quantum computing applications

Oxovanadium electronics for in-memory, neuromorphic, and quantum computing applications

Electron‐Sponge Nature of Polyoxometalates for Next‐Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices

Beyond Flexible: Unveiling the Next Era of Flexible Electronic Systems

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