2019
DOI: 10.1039/c9ee02433f
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Solution-processable n-doped graphene-containing cathode interfacial materials for high-performance organic solar cells

Abstract: Solution-processable n-doped graphene-containing cathode interfacial material with a low work function demonstrates 16.52% power conversion efficiency in organic solar cells.

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Cited by 140 publications
(91 citation statements)
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“…However, the progress of conventional binary configuration has lagged behind that of ternary counterpart (Table S1, Supporting Information), albeit with additional advantage of easier manufacture process for OSCs . To date, the best efficiency reported based on binary configuration is 16.4%, which apparently deserves more efforts for further improvement …”
Section: Detailed Photovoltaic Parameters Of Devices Employing Pm6:y6mentioning
confidence: 99%
“…However, the progress of conventional binary configuration has lagged behind that of ternary counterpart (Table S1, Supporting Information), albeit with additional advantage of easier manufacture process for OSCs . To date, the best efficiency reported based on binary configuration is 16.4%, which apparently deserves more efforts for further improvement …”
Section: Detailed Photovoltaic Parameters Of Devices Employing Pm6:y6mentioning
confidence: 99%
“…246 Interfacial modification has been done in different thin-film photovoltaic cells. 114,248 In PSCs, engineering of the interface between different layers of the device, including the interface between the LHP film and ESL (metal oxides or other organics in planar PSCs or scaffold layer in mesoporous devices), LHP layer and HSL, and HSL and metal contact is critical for long-term stability of devices.…”
Section: Interfaces Between the Layersmentioning
confidence: 99%
“…Combined with the wide‐bandgap polymer donor PBDB‐T or its fluorinated derivative PM6 (both having a high vertical E T1 of ≈1.70 eV), these acceptors achieved the highest PCEs of 11.2% for PBDB‐T:ITIC, 14.6% for PM6:IT‐4F, and 16.5% for PM6:Y6, and the Δ E CT in the corresponding devices were measured to be 0.18, 0.22, and 0.07 eV, respectively. [ 29,31,32,60,61 ] By making the difference between Δ E ST and Δ E CT , the Δ E BET for the three OPVs are derived to be 0.22, 0.13, and 0.23 eV, respectively. Then the rates of T1 back to T CT ( k T1 → CT ) can be estimated to be 10 7 –10 9 s −1 according to the Marcus−Levich−Jortner theory and other typical parameters (see the details in Supporting Information).…”
Section: Figurementioning
confidence: 99%
“…This is also beneficial to achieve high FFs (75‐80%) even under moderate charge mobilities of ≈10 −4 cm 2 V −1 s −1 . [ 29,32,60 ]…”
Section: Figurementioning
confidence: 99%