Solution‐Processable Near‐IR Photodetectors Based on Electron Transfer from PbS Nanocrystals to Fullerene Derivatives

Szendrei, Krisztina; Cordella, Fabrizio; Kovalenko, Maksym V.; Böberl, M.; Hesser, G.; Yarema, Maksym; Jarzab, Dorota; Mikhnenko, Oleksandr V.; Gocalinska, Agnieszka; Saba, Michele; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni; Blom, Paul W. M.; Heiß, Wolfgang; Loi, Maria Antonietta

doi:10.1002/adma.200801752

Cited by 129 publications

(112 citation statements)

References 32 publications

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“…53 Record sensitivity-bandwidth combinations, with a D*exceeding 10 12 Jones in the short-wave IR and a 3dB bandwidth up to 5 MHz, were achieved in Schottky PbS CQDs photodiodes; this was accomplished by a combination of improved carrier mobility via a more complete ligand exchange and a carrier extraction strategy that ensured drift collection dominated over diffusion. 10 Heterojunction architectures based on the p-n geometry with wide bandgap metal oxides, 54 and with polymers 38 or fullerene derivatives 55 have also been reported with high detectivities.…”

Section: Colloidal Quantum Dot Photodetectorsmentioning

confidence: 99%

Solution-processed semiconductors for next-generation photodetectors

et al. 2017

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Section: Colloidal Quantum Dot Photodetectorsmentioning

confidence: 99%

Solution-processed semiconductors for next-generation photodetectors

et al. 2017

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“…Hybrid inorganic-organic photoconductors based on type-II heterojunctions via blending PbS NCs with widely used fullerene acceptors, PCBM and C60 crystals have also been reported. 48,49 One advantage of hybrid devices is that they can operate even with oleic acid ligands as the photoexcited charge transport occurs through acceptor materials, although long ligands may supress the electron transfer process from PbS NCs to the acceptor material. In such hybrid devices both charge carriers may be collected depending upon the charge percolation pathways in the blend film and also the type of NC ligand used.…”

Section: Pbs Nanocrystal Photodetectorsmentioning

confidence: 99%

Lead sulphide nanocrystal photodetector technologies

2016

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2 Few other areas of study have uncovered the secrets of the universe like that of the interaction between light and matter, leading to many revolutionary scientific discoveries. The interaction of light, in particular with semiconducting materials, has enabled us to understand the behaviour of various fundamental phenomena and has laid the foundation of the optoelectronic systems that we rely on today. The majority of such systems necessitate the detection of light which is achieved via the use of photodetector devices. A photodetector converts incident photons into an electrical signal, which in the solid-state, is assembled together with an application-oriented readout integrated circuit (ROIC). Present-day commercially available photodetectors are typically made from gallium phosphide/silicon carbide (GaP)/(SiC), silicon (Si) and indium gallium arsenide/germanium (InGaAs)/(Ge) for detection in the ultraviolet (UV), visible and near-infrared (IR) regimes of the electromagnetic spectrum, respectively. For mid and far IR, lead sulphide (PbS), lead selenide (PbSe), indium antimonide (InSb), indium arsenide (InAs) and mercury cadmium telluride (HgCdTe) based photodetectors are commonly used. Photodetectors based on a photoemissive principle such as photomultiplier tubes (PMTs) are also widely used for ultrasensitive detection in the UV to near-IR spectral regime and are fabricated using alkali metals having a low workfunction. For applications demanding multispectral detection, 'two-colour' detectors are often manufactured with a bi-level structure, for example consisting of an IR transmitting Si photodiode mounted over an IR sensitive PbS photoconductor. Such a device structure has drawbacks that include added cost, increased complexity of device fabrication and associated issues in implementation. Furthermore, a significant majority of applications are based upon UV to near-IR light detection where the indirect bandgap of Si, the InGaAs epitaxial growth process, PMT bulkiness and high bias voltage requirement all present challenges and renders their use with flexible platforms impossible. As a result significant research effort continues to be expended on the development of a singlesystem multispectral photodetector to replace two or more detectors. In the last decade amongst all the candidate materials studied 1 PbS semiconductor nanocrystals (NCs), often referred as 'quantum dots', have emerged as the most promising material for the fabrication of 3 this type of photodetector. Such has been the progress in their development that reported PbS NC based photodetectors have already outperformed conventional state-of-the-art photodetectors in many aspects including low-cost room temperature device fabrication via solution processing, flexible substrate compatibility, broadband spectral sensitivity along with the figures of merit achieved, Fig 1a. In this review article, we present an overview of recent developments in PbS NC based photodetectors. We first provide a brief introduction to PbS NCs and their releva...

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“…The responsivity is one order of magnitude lower compared to bulk-nanojunction FeS 2 /CdS photodetectors (174.9 A W À1 ) 7 and one order of magnitude higher than that of the organic-inorganic blend of PbS/PCBM photodetectors (1.6 A W À1 ). 24 With the aim of testing FeS 2 photocharging ability, we evaluate the electrochemical capacitance measurements of FeS 2 photocapacitors under 1100 nm NIR light, and the cyclic voltammogram of FeS 2 photocapacitors is shown in Fig. 3a.…”

mentioning

confidence: 99%