Solution-processed amorphous p-type Cu-Sn-I thin films for transparent Cu-Sn-I/IGZO p–n junctions

Abstract

P-type Cu-Sn-I thin films with different Sn contents (CSn) were fabricated in air via a simple and low-cost spin-coating method. Sn additive facilitates the amorphization of CuI, and a complete amorphous phase of Cu-Sn-I film is achieved at CSn =15%. With increasing CSn, the optical bandgap increases and refractive index decreases, probably due to the influence of Sn-additive on both the electronic structure and phase state of the films. The air-processed Sn-free CuI films show p-type conduction with hole mobility and a concentration of 17.3 cm2/V−1 s−1 and 1.1 × 1019 cm−3, and an increasing trend of resistivity is observed along with a large drop in hole concentration during the Sn-inspired amorphization process. Moreover, transparent Cu-Sn-I/IGZO p–n junctions were constructed, exhibiting the optimum rectifying characteristic at CSn = 15% with a forward-to-reverse ratio of 6.2 × 103.

Improved Ultrafast Carrier Relaxation and Charge Transfer Dynamics in CuI Films and Their Heterojunctions via Sn Doping

“…The optical transmittance of CuI and CuSnI films in the visible region was 80% and 83%, respectively, indicating both films had weak absorption of visible light. The bandgaps of the CuI and CuSnI films were determined to be 3.05 and 3.1 eV, which agrees well with a previous report . Energy band diagrams of CuI, CuSnI, and ZnO before contact are depicted in (Table S1 and Figure S3).…”

“…The film thickness of CuI, CuSnI, CuI–ZnO, and CuSnI–ZnO was 50, 50, 200, and 300 nm, respectively. A Sn doping content of 15% was applied for CuSnI to provide optimum performance …”

“…The results show a strong diffraction peak at 25.5°/2θ, showing that the CuI film is crystalline (JCPDS Card No. 06-0246) . No such diffraction peaks were observed in CuSnI films, indicating that the CuSnI film is amorphous.…”

“…Despite the recent progress, some fundamental issues of CuI remain hitherto unaddressed. For instance, previous studies show that the ternary CuSnI films exhibit excellent hole mobility and improved performances compared to pristine CuI films. − A detailed understanding of the carrier dynamics in semiconductors is crucial for both fundamental development and device engineering. In the past decade, considerable efforts have been devoted to revealing the carrier dynamics in semiconductors via time-resolved spectroscopies. − Samu et al found that the recombination of excitons in CuI films is strongly dependent on the applied electrochemical bias, which is related to the populating/depopulating of trap states within the bandgap .…”

Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

“…[15][16][17][18][19] Several works were reported the utilization of novel multicomponent oxides (MCOs) as RS layers and electrodes to improve memristors' performance. [20][21][22][23][24] MCOs assume a variety of composition-dependent film structures that can be controlled by the addition of a network former, a mobility enhancer, and a carrier suppressor. Among the various MCOs, the indium tin oxide (ITO) as a transparent conductive material has been widely used in the memory and sensor industries.…”