2022
DOI: 10.1016/j.jallcom.2021.161575
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Solution-processed Cd-substituted CZTS nanocrystals for sensitized liquid junction solar cells

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Cited by 10 publications
(5 citation statements)
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“…5 Moreover, over the years, various materials such as amorphous-Si, GaAs, CdTe/Se, PbSe/S, CIGS, and CZTS have been successfully deposited and optimized into thin films with required thickness and quality and are used as absorbers in second-generation solar cells to further address and combat related problems. 6–11 The advantages of these second-generation solar cells include their low production cost, flexibility, and light weightedness. 12…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…5 Moreover, over the years, various materials such as amorphous-Si, GaAs, CdTe/Se, PbSe/S, CIGS, and CZTS have been successfully deposited and optimized into thin films with required thickness and quality and are used as absorbers in second-generation solar cells to further address and combat related problems. 6–11 The advantages of these second-generation solar cells include their low production cost, flexibility, and light weightedness. 12…”
Section: Introductionmentioning
confidence: 99%
“…5 Moreover, over the years, various materials such as amorphous-Si, GaAs, CdTe/Se, PbSe/S, CIGS, and CZTS have been successfully deposited and optimized into thin films with required thickness and quality and are used as absorbers in secondgeneration solar cells to further address and combat related problems. [6][7][8][9][10][11] The advantages of these second-generation solar cells include their low production cost, flexibility, and light weightedness. 12 During the last few decades, third-generation solar cells based on nanocrystals, polymers, sensitized dyes, organicinorganic and inorganic halide perovskites have shown tremendous progress bringing a high degree of novelty and versatility in both the design of new materials and solar cell architectures.…”
Section: Introductionmentioning
confidence: 99%
“…Recent theoretical studies reveal the bandgap tunability of kesterite from 1.51 to 1.03 eV by varying the Zn/Cd ratio . Rondiya et al reported the change of structure from kesterite to stannite along with a variation in bandgap from 1.5 to 1.1 eV due to the addition of Cd in CZTS . Luan et al introduced a selenized Cd-doped CZTS film, which resulted in a thick CZTS layer at the bottom and very thin Cd–CZTSSe at the top.…”
Section: Solution Processing Approach For Doped Kesteritementioning
confidence: 99%
“…61 Rondiya et al reported the change of structure from kesterite to stannite along with a variation in bandgap from 1.5 to 1.1 eV due to the addition of Cd in CZTS. 62 Luan et al introduced a selenized Cd-doped CZTS film, which resulted in a thick CZTS layer at the bottom and very thin Cd−CZTSSe at the top. The Cd diffusion improved the crystal quality of the CZTSSe film and decreased the charge density of the depletion layer.…”
Section: Impact Of Doping By Isoelectronic Elementsmentioning
confidence: 99%
“…The reason being that their constituent elements are readily available, nontoxic, exhibit p-type conductivity, and have strong optical absorption of greater than 10 4 cm −1 in the electromagnetic spectrum visible region. In addition to the above, they have tunable direct bandgaps of 1.1-1.5 eV and high theoretical efficiency (32%) suitable for photovoltaic applications [7][8][9][10][11][12][13]. Ito and Nakazawa [14] were the first to fabricate a CZTS heterojunction diode by vacuum sputtering method.…”
Section: Introductionmentioning
confidence: 99%