Solution-Processed Cupric Oxide P-type Channel Thin-Film Transistors

Trinh, Bui Nguyen Quoc; Dũng, Nguyễn Văn; Hoa, Nguyen Quang; Duc, Nguyen Huu; Minh, Do Hong; Fujiwara, Akihiko

doi:10.1016/j.tsf.2020.137991

Cited by 10 publications

(6 citation statements)

References 35 publications

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“…It should be mentioned here that the mobility of the fabricated devices is comparable to that of devices fabricated by sputtering 22,23) and slightly higher than that reported for devices fabricated by solution-based techniques. [24][25][26] Surprisingly, the device with Al electrodes has slightly higher effective mobility than the device with Au electrodes. It should be noted that other device parameters that are usually related to the presence of trap states are not influenced by the electrode metal.…”

Section: Resultsmentioning

confidence: 94%

“…Even though FET devices based on CuO films deposited from solution are very promising for industrial applications for low-cost and largearea electronics there have been few reports on these devices. [7][8][9][10][11] The significant drawback of copper-oxide-based devices lies in the metal contacts. Although Ni, Ag, and Pt have been proposed, the most common injection contacts are made of Au because of its low injection barrier.…”

Section: Introductionmentioning

confidence: 99%

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Reduction of solution-processed copper-oxide-based transistors’ contact resistance using aluminium electrodes

Micjan

Vincze

Weis

2023

Jpn. J. Appl. Phys.

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Metal-oxide semiconductors have drawn great attention in recent years for the possibility of low-cost applications. Especially solution-processed copper-oxide transistors have been envisioned; however, they struggle because of low effective mobility and high-cost metals used for injection electrodes. Here we report the application of gold and aluminium for source/drain electrodes of the device using cupric oxide as an active layer. Furthermore, the detailed analysis of the contact resistance illustrates a lower injection barrier for aluminium electrodes, making them a suitable replacement for high-cost gold electrodes.

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Section: Resultsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Reduction of solution-processed copper-oxide-based transistors’ contact resistance using aluminium electrodes

Micjan

Vincze

Weis

2023

Jpn. J. Appl. Phys.

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“…This outcome had been published by our research group. 5,25) However, the textures of the films changed dramatically when Ni element was introduced, as depicted from Fig. 3(b) to Fig.…”

Section: Morphological Propertymentioning

confidence: 98%

“…However, the lack of p-type semiconductor materials will make it difficult to develop electronic and photovoltaic devices in the future. It has been well known that the ptype semiconductor oxide like CuO exhibits some unique advantages such as high intrinsic carrier concentration, high light absorption coefficient, and low heat emission that could become potential sources for practical applications in solar cells, [1][2][3][4] thin film transistors, 5,6) and optical devices. 7) Here, a pure CuO has a direct bandgap of 1.2 eV to 1.9 eV 8,9) with p-type conductivity attributed to the generation of cation vacancies in the monoclinic structure.…”

Section: Introductionmentioning

confidence: 99%

Structural, Morphological, Optical Properties and Impedance Analysis of Solution-Processable Ni-Doped CuO Thin Films on ITO/Glass Substrates

Mai¹,

Loi

Minh

et al. 2023

Mater. Trans.

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Cupric-oxide-based thin films with various amounts of 0, 1, 2, 3, and 4 wt.% Ni doping were, in turn, deposited on ITO/glass substrates via a solution process. The 0.25 M concentrated solutions of copper (II) acetate monohydrate and nickel acetate tetrahydrate were used as starting materials mixed in ethanol solvent, in order to form the precursors. We obtained that the crystalline structure was not affected by the increase in Ni doping concentration as evidenced by X-ray diffraction patterns. The surface morphology observed by scanning electron microscope pointed out the presence of linked-structure nanoparticles. The influence of Ni doping on the optical bandgap width was evaluated by using ultravioletvisible spectrometry. We found that the optical bandgap should be direct, and it decreased from 2.69 to 2.38 eV for the range doped. Interestingly, we determined the relaxation time of the Ni-doped CuO/ITO/glass structure from measuring the electrochemical impedance spectroscopy, and it was 0.36 s for the undoped film, then gradually decreased to be 0.31, 0.11, 0.1, and 0.04 s with increasing the Ni doping concentration. This achievement result will serve as a foundation for the future photonic researches.

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“…Like other CuO nanostructures, thin films also show potential for applications in photovoltaic cells [ 4 – 5 ], lithium-ion batteries [ 6 ], supercapacitors [ 7 ], gas sensors [ 8 ], and biosensors [ 9 ]. Furthermore, the literature reports their utility in photodetectors [ 10 – 11 ], memory structures [ 12 – 13 ], and p-type channels in transistors [ 14 – 15 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

Ozga,

Zielony,

Wierzbicka

et al. 2024

Beilstein J. Nanotechnol.

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This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the properties of CuO thin films. An innovative hydrothermal method ensures homogeneous single-phase films initially. However, their electrical instability and susceptibility to cracking under the influence of temperature have posed a challenge to their utilization in electronic devices. To address this limitation, the HT+RTA procedure has been developed, which effectively eliminated the issue. Comprehensive surface analysis confirmed the procedure’s ability to yield continuous films in which the content of organic compounds responsible for the formation of cracks significantly decreases. Structural analysis underscored the achieved improvements in the crystalline quality of the films. The implementation of the HT+RTA procedure significantly enhances the potential of CuO films for electronic applications. Key findings from Kelvin probe force microscopy analysis demonstrate the possibility of modulating the work function of the material. In addition, scanning capacitance microscopy measurements provided information on the changes in the local carrier concentration with each repetition. These studies indicate the increased usefulness of CuO thin films obtained from the HT+RTA procedure, which expands the possibilities of their applications in electronic devices.

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Solution-Processed Cupric Oxide P-type Channel Thin-Film Transistors

Cited by 10 publications

References 35 publications

Reduction of solution-processed copper-oxide-based transistors’ contact resistance using aluminium electrodes

Reduction of solution-processed copper-oxide-based transistors’ contact resistance using aluminium electrodes

Structural, Morphological, Optical Properties and Impedance Analysis of Solution-Processable Ni-Doped CuO Thin Films on ITO/Glass Substrates

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

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