Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

Lin, Jian; Ooi, Poh Choon; Li, Fushan; Guo, Tailiang; Kim, Tae Whan

doi:10.1109/led.2015.2480119

Cited by 14 publications

(6 citation statements)

References 17 publications

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“…Even with a bending radius of 10 mm, the VFGOTM devices exhibited excellent mechanical stability with a memory ratio more than 10 3 over 200 cycles. On the contrary, compared to the VFGOTM devices, the conventional planar FGOTM device suffered large current drop with a decrease of bending radius, which was caused by the strain induced in‐plane cracks of the channel layer . To explore the endurance characteristics stability of the VFGOTM devices under different bending times (10, 100, and 1000 times) with different bending radius (54, 27, 18, and 10 mm), the variations of the on state and off state current for 200 PRER cycles are investigated and presented in Figure d–g.…”

Section: Resultsmentioning

confidence: 99%

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Wang

Chen

et al. 2017

Adv Funct Materials

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110

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Flexible floating-gate organic transistor memory (FGOTM) is a potential candidate for emerging memory technologies. Unfortunately, conventional planar FGOTM suffers from weak driving ability and insufficient mechanical flexibility, which limits its commercial application. In this work, a novel flexible vertical FGOTM (VFGOTM) is reported. Benefitting from new vertical architecture, VFGOTM provides ultrashort channel length to afford an extremely high current density. Meanwhile, VFGOTM devices exhibit excellent memory performance and outstanding retention property. The memory properties of VFGOTM devices are comparable or even better than traditional planar FGOTM and much better than the reported organic nonvolatile memory with vertical transistor structures. More importantly, organic nonvolatile memory with vertical transistor structures is investigated for the first time on a flexible substrate. The results show that VFGOTM architecture allows vertical current flow across the channel layer to effectively eliminate the effect of mechanical bending during current transport, which significantly improves the mechanical stability of the flexible VFGOTM. Hence, with a combination of excellent driving ability, memory performance, and mechanical stability, VFGOTM devices meet the practical requirements for high performance memory applications, which have great potential for the application in a wide range of flexible and wearable electronics.

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Section: Resultsmentioning

confidence: 99%

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Wang

Chen

et al. 2017

Adv Funct Materials

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110

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“…311 A stacking structured device is constructed with graphene QDs embedded between polymethylsilsesquioxane (PMSSQ) layers on a flexible PET substrate. 295 Guo et al investigated the I−V characteristics for the hybrid blend of graphene QDs with PMMA in the flexible RRAM device. 298 The device exhibited excellent working stability under severe bending conditions.…”

Section: Rram Devicementioning

confidence: 99%

“…Stable memory effects can be maintained for 1 × 10 4 s in the device with graphene QDs embedded between polymethylsilsesquioxane (PMSSQ) layers as the active layer. 295 4.5.8. Photonic Memristors.…”

Section: Rram Devicementioning

confidence: 99%

“…A flexible memory device based on MoS 2 QD- assembled 2D hBN flakes was fabricated by an all-printable method . A stacking structured device is constructed with graphene QDs embedded between polymethylsilsesquioxane (PMSSQ) layers on a flexible PET substrate . Guo et al investigated the I–V characteristics for the hybrid blend of graphene QDs with PMMA in the flexible RRAM device .…”

Section: Building Memristor Devices With Qdsmentioning

confidence: 99%

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Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

et al. 2020

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The continued growth in the demand of data storage and processing has spurred the development of high-performance storage technologies and brain-inspired neuromorphic hardware. Semiconductor quantum dots (QDs) offer an appealing option for these applications since they combine excellent electronic/optical properties and structural stability and can address the requirements of low-cost, large-area, and solution-based manufactured technologies. Here, we focus on the development of nonvolatile memories and neuromorphic computing systems based on QD thin-film solids. We introduce recent advances of QDs and highlight their unique electrical and optical features for designing future electronic devices. We also discuss the advantageous traits of QDs for novel and optimized memory techniques in both conventional flash memories and emerging memristors. Then, we review recent advances in QD-based neuromorphic devices from artificial synapses to light-sensory synaptic platforms. Finally, we highlight major challenges for commercial translation and consider future directions for the postsilicon era.

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“…Compared to the popularly studied re-programmable non-volatile memories [7][8][9][10], write-once read-many (WORM) memories are more suitable for those envisioned applications, since they only require programming once, and very stable memory states can be formed. Electrically programmed WORM based on fuses or anti-fuses have been investigated, and can be realized in either a one-layer horizontal structure or a multi-layer vertical structure [11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Inkjet-Printed Multi-Bit Low-Voltage Fuse-Type Write-Once-Read-Many Memory Cell

Wang

Feng

et al. 2016

IEEE Electron Device Lett.

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Low voltage fuse type write-once-read-many (WORM) memories were fabricated using a common material inkjet printer to form both the contact pads and the resistor tracks with the same silver ink and process settings. Based on the dependence of the fusing voltage on the length of the printed resistor track, a new cell structure was proposed to achieve multi-bit memories. The fabricated 2-bit memory cell presents excellent long term storage and operation stabilities. 16-bit memories were achieved using this cell structure with greatly saved contact pad numbers for easier external electrical connections compared to the conventional design. A system demonstration of using the memories was finally provided to prove the potential of this technology for practical use.

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Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

Cited by 14 publications

References 17 publications

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems

Inkjet-Printed Multi-Bit Low-Voltage Fuse-Type Write-Once-Read-Many Memory Cell

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