Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide

Li, Yuzhi; Lan, Linfeng; Xiao, Peng; Lin, Zhien; Sun, Sheng; Song, Wei; Song, Erlong; Gao, Peng; Wang, Dan; Ning, Honglong; Peng, Junbiao

doi:10.1039/c5ra09435f

Cited by 23 publications

(22 citation statements)

References 26 publications

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“…Several promising strategies have been proposed to address these issues, and achieve multicomponent and multilayered dielectrics, incorporating high κ and large E g into the same gate dielectric ( Table 4 ). Kats et al proposed a novel sodium beta‐alumina (SBA) film .…”

Section: Recent Achievements Of Oxide High κ Dielectrics Using Solutimentioning

confidence: 99%

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

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Section: Recent Achievements Of Oxide High κ Dielectrics Using Solutimentioning

confidence: 99%

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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“…This ascertains the electrolytic insulator to stay on top of the channel layer and thereby forcing the electronic transport to take place mostly through the silver metal, as no carrier accumulation can take place at the semiconductor underneath, which is devoid of direct contact with the electrolytic insulator. Consequently, we choose a‐IZO as the semiconductor material; amorphous oxide semiconductors (AOSs) can be featureless and spatially homogeneous even when solution processed . The detailed structural characterization of the semiconductor material is shown in Figure .…”

mentioning

confidence: 99%

Concurrent Subthermionic and Strong Thermionic Transport in Inkjet‐Printed Indium Zinc Oxide/Silver Hybrid‐Channel Field‐Effect Transistors

Behera

Devabharathi

Pradhan

et al. 2019

Adv Elect Materials

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Here, the first term, V GS S ψ ∂ ∂ , known as the "body factor", cannot be less than 1 for standard MOSFET electrostatics, and the second term log I ( ) S 10 D ψ ∂ ∂ that is equals ln(10) β K T q and is 60 mV dec −1 at room temperature, determines the minimum limit of the subthreshold swing for the thermionic emission over the Boltzmann barrier. This in turn defines the steepness/slope of the transfer curves, the signal gain and the dynamic power dissipation of the electronic switches. One way to circumvent this limit is to allow tunneling through the barrier; in this case band-to-band-tunneling (BTBT) would be required as single career tunneling cannot lead to subthermionic transport. [2] However, the BTBT field-effect transistors (FETs) typically show low Oncurrents; while there are large number of subthermionic tunnel FETs reported in the literature, [3][4][5][6][7][8][9][10][11][12][13] the recent ones based on 2D dichalcogenides demonstrate particularly high performance. [2,14,15] An alternative approach to achieve subthermionic transport, originally proposed by Salahuddin and Datta [16] and later experimentally demonstrated by various research groups, [16][17][18][19][20][21][22][23][24][25][26][27] deals with concept that can actually reduce the body factor to values less than 1. This involves stabilizing a negative capacitance regime by placing a ferroelectric and dielectric layer in series to comprise the MOS capacitor. In this case, the Boltzmann activation barrier remains intact; however, an artificial voltage amplifier or step-up transformer is created using the sharp switching of the dipoles (i.e., exploiting the square-shaped P-E loop) of the ferroelectric and thereby a faster change in Ψ S (surface potential) becomes possible, as compared to the applied ∂V GS . However, in either of these approaches, specific requirements in terms of semiconductors (e.g., single sheet of 2D material), dielectrics or interfaces (e.g., ferroelectric/dielectric interface in case of negative capacitance (NC)-gate FETs) are there, which are certainly nontrivial to be replicated, when the complete device is to be solution processed/printed. Consequently, subthermionic transport Subthreshold slope of field-effect transistors (FETs) less than the fundamental Boltzmann limit (60 mV dec −1 at 300 K) is demonstrated either using band-to-band tunneling or negative capacitance (NC) ferroelectric-gate transistors. However, it is difficult to replicate both of these strategies in solution-processed/printed FETs. Nonetheless, it is shown that the use of a metal-insulator-metal-semiconductor architecture alongside electrolyte gating can simultaneously create highly reproducible static negative capacitance behavior in printed FETs, resulting in subthermionic transport for over four decades of drain currents with a subthreshold slope as low as 16 mV dec −1 , and thereafter a strong thermionic transport regime, characterized by an unprecedented On-current of 195 µA µm −1 , a transconductance of 215 µS µm, and a metal-like On-state res...

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“…c) that there are Nd clusters (dark areas) segregated in the Al–Nd film. The segregated Nd is important for releasing compressive or tensile strength during bending . The dielectric properties of AlO x :Nd were assessed by fabricating MIM capacitors.…”

Section: Resultsmentioning

confidence: 99%

“…The segregated Nd is important for releasing compressive or tensile strength during bending. [21][22][23] The dielectric properties of AlO x :Nd were assessed by fabricating MIM capacitors. The capacitance density (C i ) of the AlO x : Nd film is 42.0 nF/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

Letter : Solution-processed flexible zinc-tin oxide thin-film transistors on ultra-thin polyimide substrates

Gao

Lan

Xiao

et al. 2016

Jnl Soc Info Display

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-In this letter, solution-processed flexible zinc-tin oxide (Z 0.35 T 0.65 O 1.7 ) thin-film transistors with electrochemically oxidized gate insulators (AlOx:Nd) fabricated on ultra-thin (30 μm) polyimide substrates are presented. The AlOx:Nd insulators exhibited wonderful stability under bending and excellent insulating properties with low leakage current, high dielectric constant, and high breakdown field. The device exhibited a mobility of 3.9 cm 2 /V · s after annealing at 300°C. In addition, the flexible device was able to maintain the electricity performance under various degrees of bending, which was attributed to the ultra-thin polyimide substrate.

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Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide

Cited by 23 publications

References 26 publications

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Concurrent Subthermionic and Strong Thermionic Transport in Inkjet‐Printed Indium Zinc Oxide/Silver Hybrid‐Channel Field‐Effect Transistors

Letter : Solution-processed flexible zinc-tin oxide thin-film transistors on ultra-thin polyimide substrates

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