Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor

Chourasia, Nitesh K.; Sharma, Anand; Acharya, Vishwas; Pal, Nila; Biring, Sajal; Pal, Bhola N.

doi:10.1016/j.jallcom.2018.10.163

Cited by 32 publications

(17 citation statements)

References 36 publications

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“…Figure 2 Thermal behavior of LiGaO 2 is shown in Figure S1 which indicated the crystallization of this dielectrics is 550 0 C and the crystallization temperature of dielectric Li 2 ZnO 2 is also 500 0 C which has been reported in our earlier paper. [33] Figure 2 Thermal gravimetric analysis (TGA) and differential thermo-gravimetric analysis (DTA) curves of precursor powder LiInO 2…”

Section: Thermal Analysismentioning

confidence: 99%

“…[43] Similarly from Figure S3, clear reflection from ( 120) and (112) planes are observed for Li 2 ZnO 2 that has been reported in our earlier work. [33] Fig…”

Section: Structural Propertiesmentioning

confidence: 99%

“…However, the optical band gap of Li 2 ZnO 2 is much lower (3.3 eV) which has been reported in our earlier work. [33]…”

Section: Optical Properties Of Lilno 2 Thin Filmsmentioning

confidence: 99%

“…In this situation, ion-conducting oxide dielectric shows the best performance for low operating voltage transparent TFT fabrication. [30][31][32][33][34][35] Therefore, for high performance with low operating voltage ambipolar TFT fabrication, oxide semiconductor and ionic oxide dielectric is one of the best combination. In addition to that such kind of ambipolar TFT can be environmentally stable due to its intrinsic oxide nature.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution‐Processed High‐Performance 1 V Ambipolar Oxide Transistors

Chourasia

Sharma

Pal

et al. 2020

Physica Rapid Research Ltrs

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Complementary metal-oxide-semiconductor (CMOS) technology is used prevalently for constructing different integrated circuits in microprocessors, microcontrollers, static RAM, image sensors, data converters, and highly integrated transceivers in various types of communications. [1] An ambipolar thin-film transistor (TFT) provides both electron and hole conduction in a single TFT, which is a unique choice for high-density CMOS fabrication. [2] In addition to this CMOS fabrication, ambipolar charge transport of TFTs is widely used for developing lightemitting transistors, [3] flash memories, [4] and artificial synaptic emulation. [5] To date, most reported thin-film ambipolar transistors have been fabricated by using small organic molecule and polymer semiconductors. [6,7] However, the main difficulties of these organic small-molecule/polymerbased TFTs are their low carrier mobility and poor atmospheric stability for electron transport. [2] In contrast, low-cost solutionprocessed metal-oxide-semiconductors exhibit relatively excellent environmental stability and higher carrier mobility. Moreover, the operating voltage of metaloxide TFTs can be reduced to 2.0 V by using a high-κ gate dielectric, such as Ta 2 O 5 , [7] ZrO 2 ,or [8] HfO x. [9] Therefore, it is of utmost importance to develop highperformance, low-operating-voltage, oxide ambipolar TFTs by a solution-processed technique. To date, ion-conducting oxide dielectrics show the best performance in lowering the operating voltage of oxide TFTs due to their high capacitance value, which originates from the mobile ion of the dielectric thin film. [10,11] However, the main obstacle is to find out a high-performance hole transport metal-oxide-semiconductor. [12] So far, SnO and SnO 2 have shown some potential. [13] Similar to various metaloxide-semiconductors, tin oxide (SnO 2) is commonly found as an n-type semiconductor. However, the p-type SnO 2 could be formed by introducing a hole carrier in its valence band. Until now, there are two established methods to achieve this hole transport phenomenon in SnO 2 semiconductors. One of them is performed by creating Sn vacancies, which can introduce a hole carrier to the valence band of SnO 2 , commonly attained by controlled sputtering method deposition. [14] The other way is by chemical doping with group IIIA elements such as indium (In) and gallium (Ga), which can occupy an Sn site in the SnO 2 lattice. [15] Based on those earlier reports, we have fabricated a SnO 2 TFT by choosing LiInO 2 and LiGaO 2 as ion-conducting oxide dielectrics, which can dope In and Ga atoms, respectively, to the interfacial layer of SnO 2. To identify the differences, we have also chosen Li 2 ZnO 2 as a third ionic dielectric containing a divalent Zn atom, which is unable to introduce holes in SnO 2. A comparative electrical characterization shows a clear n-channel

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Section: Thermal Analysismentioning

confidence: 99%

“…[43] Similarly from Figure S3, clear reflection from ( 120) and (112) planes are observed for Li 2 ZnO 2 that has been reported in our earlier work. [33] Fig…”

Section: Structural Propertiesmentioning

confidence: 99%

“…However, the optical band gap of Li 2 ZnO 2 is much lower (3.3 eV) which has been reported in our earlier work. [33]…”

Section: Optical Properties Of Lilno 2 Thin Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution‐Processed High‐Performance 1 V Ambipolar Oxide Transistors

Chourasia

Sharma

Pal

et al. 2020

Physica Rapid Research Ltrs

Self Cite

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“…2,3 Employment of high-k dielectric materials insead of SiO 2 is the best alternative which allow us to deposit thicker dielectric lm by maitaining the advantage of low operating voltage TFT fabrication. 4,5,6,7,8 However, ionic bonds in high-k dielectrics results in high defect concentrations with oxygen vacancies (V O ) being the primary source of traps. These can be source of xed charges or act as electron traps, scattering carriers in channel (decreasing mobility), changing the threshold voltage (V T ) and assisting dielectric breakdown and gateleakage mechanism, 9 decreasing device performance, and affects the stability and reliability of devices.…”

Section: Introductionmentioning

confidence: 99%

Solution processed low-voltage metal-oxide transistor by using TiO2/Li–Al2O3 stacked gate dielectric

Pal

Pandey

Biring

et al. 2022

J Mater Sci: Mater Electron

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A solution processed top-contact bottom gated SnO 2 thin-lm transistor (TFT) has been fabricated by using a TiO 2 / Li-Al 2 O 3 bilayer stacked gate dielectric that show operating voltage of this TFT within 2.0 V.It is observed that the bilayer dielectric has much higher areal capacitance with lower leakage current density that signi cantly improve the overall device performance of TFT. The TFT with bilayer gate dielectric shows an effective carrier mobility (µ sat ) of 9.2 cm 2 V − 1 s − 1 with an on/off ratio of 7.1x10 3 which are signi cantly higher with respect to the TFT with a single layer Li-Al 2 O 3 gate dielectric. The origin of this improvement is due to the Schottky junction between the highly doped silicon (p ++ -Si) and TiO 2 of bilayer stacked dielectric that induced electrons to the channel which reduces the dielectric/semiconductor interface trap state. This investigation opens a new path to develop TFT device performance using a suitable bilayer stack of gate-dielectric.

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Effects of Cr doping on the structural, optical and electrical characterizations of spray-deposited ZnSnO3 thin films

Al-Zahrani,

Alsulami

2023

Appl. Phys. A

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Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor

Cited by 32 publications

References 36 publications

Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution‐Processed High‐Performance 1 V Ambipolar Oxide Transistors

Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution‐Processed High‐Performance 1 V Ambipolar Oxide Transistors

Solution processed low-voltage metal-oxide transistor by using TiO2/Li–Al2O3 stacked gate dielectric

Effects of Cr doping on the structural, optical and electrical characterizations of spray-deposited ZnSnO3 thin films

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