Solution‐Processed Metal‐Oxide Thin‐Film Transistors for Flexible Electronics

Kim, Hyun Jae

doi:10.1002/9781119715641.ch9

Cited by 2 publications

(2 citation statements)

References 37 publications

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“…With the progressive development of miniaturization and high integration of advanced and portable electronic products such as flat panel displays, wearable or implantable sensors and biomedical devices, etc, power consumption has emerged as a major issue limiting their applications [1][2][3]. Oxide thinfilm transistors (TFTs) used as the driving backplane can quickly and efficiently manage the operation of each pixel unit, which is dependent on the accumulation layer characteristics caused by the gate insulating layer.…”

Section: Introductionmentioning

confidence: 99%

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO₂ dielectric films

Chen,

Liang,

Liao

et al. 2024

J. Phys. D: Appl. Phys.

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High-k oxide dielectric films are indispensable for low-power-consumption oxide thin-film transistors (TFTs) applied in advanced and portable electronics. However, high-quality oxide dielectric films prepared by solution process typically require sophisticated processes and long thermal annealing time, severely limiting both the throughput manufacturing and cost-effectiveness. In this study, the influence of different heating-up methods on the surface morphology and dielectric properties was systematically investigated. Gradient heating-up method could not only substantially improve the surface morphology and quality of high-k ZrO2 films but also efficiently shorten the annealing time. The gradient heating-up process was further designed on the basis of thermal behavior of the xerogel-like precursor, which successfully realize the preparation of high-quality ZrO2 films with an annealing time of 5 min (i.e. the efficiency of thermal treatment increased by about 89%). The ZrO 2 film presented excellent dielectric properties, including a low leakage current density of ~10−8 A/cm2 (at 2 MV/cm), a large areal capacitance of 169 nF/cm2 and a high dielectric constant of 20.41 (1 MHz). Furthermore, InSnZnO TFT based on the ZrO2 gate dielectrics shows an acceptable device performances, such as a high carrier mobility of 2.82 cm2/V s, a high on/off current ratio of ~105 and a low subthreshold swing of 0.19 V/decade at a low operation voltage of 5 V. This work provide a highly promising approach to fabricate high-quality solution-processed high-k oxide dielectric films employed for large-scale and low-power-consumption electronics.

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Section: Introductionmentioning

confidence: 99%

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO₂ dielectric films

Chen,

Liang,

Liao

et al. 2024

J. Phys. D: Appl. Phys.

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“…[14][15][16][17] Such processes involve usually multiple steps, including hydrolysis of metal precursors for ligand release and condensation through annealing to form metal-oxide-metal (M-O-M) frameworks. 18 The annealing step is particularly crucial, providing energy to develop M-O bonds, removing impurities and solvents, and densifying the semiconductor film. 19 A further feature of solution-based devices is the use of polymers as preferred dielectric materials in contrast to the standard metal oxide insulators like HfO x or ZrO x .…”

Section: Introductionmentioning

confidence: 99%

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

Kumaran,

Karsten,

Zharnikov

et al. 2024

J. Mater. Chem. C

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Solution‐Processed Metal‐Oxide Thin‐Film Transistors for Flexible Electronics

Cited by 2 publications

References 37 publications

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO₂ dielectric films

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO₂ dielectric films

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

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Solution‐Processed Metal‐Oxide Thin‐Film Transistors for Flexible Electronics

Cited by 2 publications

References 37 publications

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO2 dielectric films

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO2 dielectric films

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

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Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO₂ dielectric films

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO₂ dielectric films