2015
DOI: 10.1016/j.orgel.2014.12.010
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Solution-processed nanocomposite dielectrics for low voltage operated OFETs

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Cited by 74 publications
(35 citation statements)
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“…It is known that solution-processed films usually have poor stabilities [43][44][45]. Hydrogen plasma treatment [44], O 2 plasma annealing [46], and addition of a capping layer [47] have been verified to improve their reliabilities. Stability issues are out of scope of this work.…”
Section: Resultsmentioning
confidence: 99%
“…It is known that solution-processed films usually have poor stabilities [43][44][45]. Hydrogen plasma treatment [44], O 2 plasma annealing [46], and addition of a capping layer [47] have been verified to improve their reliabilities. Stability issues are out of scope of this work.…”
Section: Resultsmentioning
confidence: 99%
“…This buffer layer needs to be thin enough to maintain a high C i so that the OFET operates at low voltages 23–27. Several buffer layers have been previously reported including cross‐linked PVP films with a high‐ k hybrid PVDF inorganic nanocomposite layer 28. However, inhomogeneous film morphologies caused by the inorganic nanoparticles and unreacted hydroxyl groups lead to charge trapping at the OSC/dielectric interface causing performance instabilities in these devices.…”
mentioning
confidence: 99%
“…However, with solution‐processed polymer transistors, specific challenges are encountered, as dictated by their electronic structure and charge‐transport properties. Here and in the following, low‐voltage operation refers to transistors capable of switching between their OFF and ON regions for a maximum terminal bias of about 3 V . For a transistor channel length in the micrometer range, as allowed by conventional microfabrication methods, low‐voltage operation corresponds to typical longitudinal electric fields down to 1 kV cm −1 or less; at the same time, for gate dielectric thicknesses in the submicrometer range, the transverse field is reduced to tens of kV cm −1 .…”
mentioning
confidence: 99%