Solution-Processed Nanoparticle Super-Float-Gated Organic Field-Effect Transistor as Un-cooled Ultraviolet and Infrared Photon Counter

Yuan, Yongbo; Dong, Qingfeng; Yang, Bin; Guo, Fawen; Zhang, Qi; Han, Ming; Huang, Jinsong

doi:10.1038/srep02707

Cited by 16 publications

(15 citation statements)

References 49 publications

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“…Other hybrid phototransistor architectures based on the combination of ZnO NCs, PbS CQDs and organic semiconductors were reported with UV-IR photon counting capabilities. 87 The separation of transport and sensitization can also be monolothically achieved in much simpler architectures. Photojunction Field Effect Transistors (photoJFETs) rely on the presence of a high resistance depletion region between a pair or source and drain non-ohmic contacts (Fig.…”

Section: Metal Halide Perovskite Photodetectorsmentioning

confidence: 99%

Solution-processed semiconductors for next-generation photodetectors

et al. 2017

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Section: Metal Halide Perovskite Photodetectorsmentioning

confidence: 99%

Solution-processed semiconductors for next-generation photodetectors

et al. 2017

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“…The morphology and size of the derived particles were examined by transmission electron microscopy (TEM) 7 and high-resolution TEM (HRTEM) using a JEOL TEM 2100F microscope at an accelerating voltage of 200 kV. The morphology and size of the derived particles were examined by transmission electron microscopy (TEM) 7 and high-resolution TEM (HRTEM) using a JEOL TEM 2100F microscope at an accelerating voltage of 200 kV.…”

Section: Instrumentationmentioning

confidence: 99%

Growth and optical properties of Cu₂ZnSnS₄ decorated reduced graphene oxide nanocomposites

et al. 2015

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Cu2ZnSnS4 (CZTS) nanoparticles were synthesized by the precursor injection method using oleylamine as a solvent. Preliminary characterization indicated that the synthesized nanoparticles belonged to the kesterite structure with a bulged sphere-like morphology. Reduced graphene oxide (rGO) was synthesized by an improved Hummers method and was used for nanoparticle functionalization. CZTS nanocrystals were decorated on rGO by two different methods. One was oleylamine-based nanoparticle functionalization, and the other was in situ nanoparticle growth. Transmission electron microscopy analysis of CZTS-functionalized rGO showed that the synthesized nanoparticles were uniformly spread on the surface of rGO sheets. Single phase CZTS nanoparticles were grown on rGO without any impurity phase in the in situ growth. Tuned absorption of the pure CZTS was observed by the decoration of CZTS nanoparticles on the surface of rGO in the visible and UV regions.

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“…However, the applications of PMTs are limited due to their high cost and some other intrinsic disadvantages/limitations, such as high working voltage (>1000 V), fragile glass‐tube structure, susceptibility to magnetic field, and complex cooling sytem. Therefore, it is urgent to develop compact and robust solid‐state photodetectors with high sensitivity, good flexibility, and low cost …”

mentioning

confidence: 99%

Ultrahigh Gain, Low Noise, Ultraviolet Photodetectors with Highly Aligned Organic Crystals

Yuan

Huang

2015

Advanced Optical Materials

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wileyonlinelibrary.comCOMMUNICATION solution methods, making them quite promising in the mass production of optoelectronic devices with low cost. [ 18 ] Organic semiconductors are appealing light detection materials due to their much stronger light absorption than most inorganic counterparts. [ 19,20 ] Nevertheless, the low carrier mobility of organic semiconductors, which is usually in a range of 10 −6 -1.0 cm 2 V −1 s −1 , limits their application for high performance photodetectors. Encouragingly, we recently demonstrated that C8-BTBT polycrystalline fi lms fabricated by an "off-centre spin-coating" method can have an ultrahigh average hole carrier mobility of 25 cm 2 V −1 s −1 . [ 21 ] This high carrier mobility provides a platform for exploring high performance organic photodetectors. In this study, we reported highly sensitive phototransistors with the highly aligned C8-BTBT polycrystalline fi lms as the active layers.The organic transistor we used here has a top-contacted bottom-gated structure ( Figure 1 a). The highly aligned C8-BTBT polycrystalline fi lms were casted from a blended solution of C8-BTBT and polystyrene (PS) using the "offcentre spin-coating" method. [ 21 ] The molecular structures of C8-BTBT and PS are shown in Figure 1 a. The C8-BTBT fi lms had an edge-on alignment on the substrate and form monoclinic crystal structure. The in-plane stacking of the C8-BTBT molecules is illustrated in Figure 1 a. Highly doped silicon wafer with a 300 nm SiO 2 layer was used as the substrate and gate electrode, which also demonstrates the direct integration of the organic phototransistors with silicon chips. The dielectric layer contains the 300 nm thermally grown SiO 2 layer and a 330 nm crosslinked poly(4-vinylphenol) (PVP) layer, [ 22 ] which has a total specifi c capacitance of 6 × 10 −5 F m −2 . We used thick dielectric layer because it can cause smaller leakage current and a larger threshold voltage shift that is needed for sensitive photodetection reported here (see Figure S1 in the Supporting Information). [ 23 ] The C8-BTBT fi lms fabricated on crosslinked PVP surface had a very high degree of crystallinity and crystal alignment, as evidenced by the clear anisotropic absorption spectra in the wavelength range of 295-375 nm (Figure 1 b). The strong dependence of the absorption with the polarization of the incident light beam indicates the presence of highly oriented C8-BTBT molecules in a macroscopic scale, since the light spot in the measurement was >3 mm 2 . [ 21,24 ] The presence of three absorption peaks (e.g., 360, 342, and 325 nm) is due to the excitation of electrons from ground state into different vibrational states with an energy step of 0.19 eV. [ 25 ] For the C8-BTBT fi lm with a thickness of 15 nm, the absorption at 354 nm is 15% or 6% when the electrical fi eld ( E ) of polarized light is parallel or perpendicular to the (100) direction of the C8-BTBT crystals (Figure 1 b), respectively, giving an average absorption of around 10% for nonpolarized light.

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Solution-Processed Nanoparticle Super-Float-Gated Organic Field-Effect Transistor as Un-cooled Ultraviolet and Infrared Photon Counter

Cited by 16 publications

References 49 publications

Solution-processed semiconductors for next-generation photodetectors

Solution-processed semiconductors for next-generation photodetectors

Growth and optical properties of Cu₂ZnSnS₄ decorated reduced graphene oxide nanocomposites

Ultrahigh Gain, Low Noise, Ultraviolet Photodetectors with Highly Aligned Organic Crystals

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Solution-Processed Nanoparticle Super-Float-Gated Organic Field-Effect Transistor as Un-cooled Ultraviolet and Infrared Photon Counter

Cited by 16 publications

References 49 publications

Solution-processed semiconductors for next-generation photodetectors

Solution-processed semiconductors for next-generation photodetectors

Growth and optical properties of Cu2ZnSnS4 decorated reduced graphene oxide nanocomposites

Ultrahigh Gain, Low Noise, Ultraviolet Photodetectors with Highly Aligned Organic Crystals

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Product

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Growth and optical properties of Cu₂ZnSnS₄ decorated reduced graphene oxide nanocomposites