Solution-processed organic field-effect transistors based on dinaphthothienothiophene precursor with chemically modified electrodes

Nagase, Takashi; Abe, Souichiro; Kobayashi, Takashi; Kimura, Yu; Hamaguchi, Azusa; Ikeda, Yuichi; Naito, Hiroyoshi

doi:10.1088/1742-6596/924/1/012008

Cited by 4 publications

(4 citation statements)

References 18 publications

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“…The modification of Au electrodes with pentafluorobenzenethiol (PFBT, purchased from TCI Chemicals) was performed by immersion in 50 × 10 −3 m solution in ethanol for more than 8 h under ambient conditions. [ 41 ] The MT‐pyrene crystals grown by the physical vapor transport method were carefully transferred from the glass substrates to the top of the CYTOP film using a tungsten needle or a nylon loop. The top‐contact FETs were completed by placing the droplets of colloidal graphite (source and drain electrodes) on each side of the crystal and drying for more than 30 min under ambient conditions.…”

Section: Methodsmentioning

confidence: 99%

“Manipulation” of Crystal Structure by Methylthiolation Enabling Ultrahigh Mobility in a Pyrene‐Based Molecular Semiconductor

et al. 2021

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Control and prediction of crystal structures of molecular semiconductors are considered challenging, yet they are crucial for rational design of superior molecular semiconductors. It is here reported that through methylthiolation, one can rationally control the crystal structure of pyrene derivatives as molecular semiconductors; 1,6‐bis(methylthio)pyrene keeps a similar sandwich herringbone structure to that of parent pyrene, whereas 1,3,6,8‐tetrakis(methylthio)pyrene (MT‐pyrene) takes a new type of brickwork structure. Such changes in these crystal structures are explained by the alteration of intermolecular interactions that are efficiently controlled by methylthiolation. Single crystals of MT‐pyrene are evaluated as the active semiconducting material in single‐crystal field‐effect transistors (SC‐FETs), which show extremely high mobility (32 cm2 V−1 s−1 on average) operating at the drain and gate voltages of −5 V. Moreover, the band‐like transport and very low trap density are experimentally confirmed for the MT‐pyrene SC‐FETs, testifying that the MT‐pyrene is among the best molecular semiconductors for the SC‐FET devices.

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Section: Methodsmentioning

confidence: 99%

“Manipulation” of Crystal Structure by Methylthiolation Enabling Ultrahigh Mobility in a Pyrene‐Based Molecular Semiconductor

et al. 2021

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“…[13][14][15][16] In particular, OFETs fabricated using only wet processes have attracted attention as a solution to the development of simple processes for transistor fabrication in recent years. [17][18][19][20][21][22] Generally, it is necessary to fabricate two types of OFETs by the wet process on a substrate, namely p-channel-and n-channel-type transistors, to realize complementary metal-oxide semiconductor (CMOS) inverters for Flex-LSI circuits. However, it is difficult to form two types of organic semiconductor (OSC) layers separately via the wet process as in silicon-based CMOS technologies, thereby causing challenges to achieve higher definitions and higher degrees of integration in circuits.…”

Section: Introductionmentioning

confidence: 99%

Improvement of hole injection characteristics in wet-processed organic field-effect transistor based on oxidation of silver electrode surface

Minagawa¹,

Sakai²,

Takashima³

et al. 2022

Jpn. J. Appl. Phys.

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Source–drain electrodes for organic field-effect transistors (OFETs) were fabricated with Ag nanoink on a Si wafer with a 300 nm thick oxide layer using the repellent patterning method, and a depth-profile analysis of the composition and physical properties of the electrode surface was performed once the electrode was oxidized by UV–ozone irradiation. Additionally, OFETs with a wet-processed electrode and 9,10-diphenylanthracene layer were fabricated, and their electrical characteristics were measured. The chemical composition of the Ag electrode surface changed to silver oxide (Ag2O or AgO) due to the longer oxidation treatment time, and the work function value increased. In the OFET with the electrode oxidized for 600 s, increased drain current ∣I D∣ was observed around a gate voltage of 0 V. Furthermore, good OFET characteristics were obtained [maximum ∣I D∣ = 326.2 μA, mobility μ = 0.91 cm2V −1·s−1], which were similar to those of the OFETs manufactured using a dry process.

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“…In addition to their ability to tune metals' work function and improve the charge injection, they can also improve conduction by affecting the molecular packing and crystallinity of organic semiconductors that are deposited either by vacuum evaporation [33], or from solution [34,35]. From molecules that has been widely used, 2,3,4,5,6-pentafluorobenzenethiol (PFBT) shows improved hole injection performances for a large range of applications such as organic field effect transistors (OFET) [26,27,[36][37][38][39], solar cells [31], memory devices [32,40], and diode rectifier [24,28]. Recently, Chang-mo Kang and coworkers have investigated the effect of these molecules on pentacene-based diodes and high rectification ratio of up to r = 10 7 has been obtained, with the ability to work in gigahertz frequency range [28].…”

Section: Introductionmentioning

confidence: 99%

High Rectification Ratio in Polymer Diode Rectifier through Interface Engineering with Self-Assembled Monolayer

Ferchichi

Pecqueur

Guérin

et al. 2021

Electronic Materials

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In this work, we demonstrate P3HT (poly 3-hexylthiophene) organic rectifier diode both in rigid and flexible substrate with a rectification ratio up to 106. This performance has been achieved through tuning the work function of gold with a self-assembled monolayer of 2,3,4,5,6-pentafluorobenzenethiol (PFBT). The diode fabricated on flexible paper substrate shows a very good electrical stability under bending tests and the frequency response is estimated at more than 20 MHz which is sufficient for radio frequency identification (RFID) applications. It is also shown that the low operating voltage of this diode can be a real advantage for use in a rectenna for energy harvesting systems. Simulations of the diode structure show that it can be used at GSM and Wi-Fi frequencies if the diode capacitance is reduced to a few pF and its series resistance to a few hundred ohms. Under these conditions, the DC voltages generated by the rectenna can reach a value up to 1 V.

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Solution-processed organic field-effect transistors based on dinaphthothienothiophene precursor with chemically modified electrodes

Cited by 4 publications

References 18 publications

“Manipulation” of Crystal Structure by Methylthiolation Enabling Ultrahigh Mobility in a Pyrene‐Based Molecular Semiconductor

“Manipulation” of Crystal Structure by Methylthiolation Enabling Ultrahigh Mobility in a Pyrene‐Based Molecular Semiconductor

Improvement of hole injection characteristics in wet-processed organic field-effect transistor based on oxidation of silver electrode surface

High Rectification Ratio in Polymer Diode Rectifier through Interface Engineering with Self-Assembled Monolayer

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