Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits

Tailoring the molecular weight of polymer additives for organic semiconductors

“…230,231 Fourth, while current polymer mixing studies are predominately carried out on p-type organic semiconductors, the n-type counterparts are equally important to realize the fabrication of electronic devices such as complementary inverts and logic circuits. 232,233 Mixing these polymer additives with n-type organic semiconductors can provide a more effective approach to control semiconductor crystallization, improve electron charge transport, and modulate surface passivation. 234,235 Future research in these aforementioned areas may shed light on further improving the overall electronic device performance.…”

“…the n-type counterparts are equally important in realize the fabrication of electronic devices such as complementary inverts and logic circuits [232,233]. By mixing these polymer additives with the n-type organic semiconductors, it can provide a more effective approach to control the semiconductor crystallization, improve electron charge transport, and modulate surface passivation [234,235].…”

Binary solvent engineering for small-molecular organic semiconductor crystallization

“…24 These high charge carrier mobilities and exceptional stabilities have opened up more pathways for implementing organic semiconductors in the fabrication of high performance semiconductor devices including organic thin film transistors, [25][26][27][28] organic gas sensors, [29][30][31][32][33] organic optoelectronic devices, [34][35][36][37][38][39][40] and complimentary circuits. [41][42][43] Nevertheless, a challenging issue in organic semiconductor growth is the control of crystallization and morphology. This is mainly caused by the intrinsic crystal misorientation when the organic semiconductor is grown in solution, as reported in many small molecular organic semiconductors.…”

A Sub‐20 nm Organic/Inorganic Hybrid Dielectric for Ultralow‐Power Organic Thin‐Film Transistor (OTFT) With Enhanced Operational Stability

“…[ 16,17 ] Along this line, various types of organic and inorganic hybrid dielectric materials have been investigated extensively to exploit the advantages from both organic and inorganic dielectric materials. [ 6,18–38 ] For example, inorganic dielectric materials such as aluminum oxide (AlO x ) and hafnium oxide (HfO x ) generally exhibited high dielectric constant as well as outstanding dielectric strength. [ 39 ] However, the abundant amount of hydroxyl groups on the surface of the oxide layer often generates unwanted trap sites, which thus impair the OTFT performance.…”

“…As an alternative, organic/inorganic hybrid dielectric layers where polymer films were utilized as organic layers have also been suggested (Table S1, Supporting Information). [ 27–38 ] Polymeric layers with reliable insulating properties can provide a favorable interface with organic semiconductors, and thus, high‐performance OTFTs have been demonstrated therewith. [ 41 ] Moreover, one of the most important advantages obtained from the polymer/inorganic hybrid layers is the improved operational stability of OTFTs.…”