Solution-Processed Organic–Inorganic Semiconductor Heterostructures for Advanced Hybrid Phototransistors

Li, Dingwei; Chen, Yitong; Tang, Yingjie; Liang, Kun; Ren, Huihui; Li, Fanfan; Wang, Yan; Liu, Guolei; Song, Chunyan; Meng, Lei; Zhu, Bowen

doi:10.1021/acsaelm.2c01218

Cited by 15 publications

(7 citation statements)

References 70 publications

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“…In contrast, in the In 2 O 3 /Al 2 O 3 /Y6‐based phototransistor where a thin Al 2 O 3 layer was inserted between In 2 O 3 and Y6, the trapping mechanism was changed from the hole‐trapping to the electron‐trapping due to the incomplete oxidation of Al 2 O 3 , [ 35 ] resulting in a negative photoresponse under NIR light. In this scenario, the photo‐induced electrons in Y6 under NIR light are trapped in the Al 2 O 3 layer, providing a top “negative” photogate that suppresses the electrons in In 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

Bidirectionally Photoresponsive Optoelectronic Transistors with Dual Photogates for All‐Optical‐Configured Neuromorphic Vision

Ren

Chen

et al. 2023

Adv Funct Materials

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Bio‐inspired neuromorphic vision sensors, integrating optical sensing, and processing functions have attracted significant attention for developing future low‐power and high‐efficiency imaging systems. However, the compulsory electrical signal modulation to achieve inhibitory behaviors in most reported neuromorphic vision sensors results in additional hardware and computational latency. Herein, bidirectional photoresponsive optoelectronic synapses based on In2O3/Al2O3/Y6 phototransistors are achieved, realizing all‐optical‐configured synaptic weight updates enabled by dual photogates. The inhibitory and excitatory photoresponses originate from the photogating effects provided by trapped photogenerated electrons in Al2O3 under near‐infrared light and the ionized oxygen vacancies in In2O3 under ultra‐violet light, respectively. The bidirectional phototransistor illustrates outstanding optoelectronic synaptic characteristics with low nonlinearity and asymmetry, demonstrating high efficiencies in both preprocessing and postprocessing tasks, such as noise reduction, contrast enhancement, and pattern recognition. The proposed dual‐photogate optoelectronic synapses provide effective strategies to construct high‐efficiency neuromorphic vision sensors and in‐sensor computing systems.

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Section: Resultsmentioning

confidence: 99%

Bidirectionally Photoresponsive Optoelectronic Transistors with Dual Photogates for All‐Optical‐Configured Neuromorphic Vision

Ren

Chen

et al. 2023

Adv Funct Materials

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“…Compared to the near-sensor visual system, the in-sensor visual system has been systematically researched due to the proposal of a wide variety of photo-induced resistive materials [147][148][149][150][151][152]. This means that neuromorphic devices can be modulated by an optical spike being directly dropped into the procedure of electric spike converting.…”

Section: Flexible In-sensor Visual Systemmentioning

confidence: 99%

Recent Progress in Wearable Near-Sensor and In-Sensor Intelligent Perception Systems

Liu,

Wang,

Liu

et al. 2024

Sensors

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As the Internet of Things (IoT) becomes more widespread, wearable smart systems will begin to be used in a variety of applications in people’s daily lives, not only requiring the devices to have excellent flexibility and biocompatibility, but also taking into account redundant data and communication delays due to the use of a large number of sensors. Fortunately, the emerging paradigms of near-sensor and in-sensor computing, together with the proposal of flexible neuromorphic devices, provides a viable solution for the application of intelligent low-power wearable devices. Therefore, wearable smart systems based on new computing paradigms are of great research value. This review discusses the research status of a flexible five-sense sensing system based on near-sensor and in-sensor architectures, considering material design, structural design and circuit design. Furthermore, we summarize challenging problems that need to be solved and provide an outlook on the potential applications of intelligent wearable devices.

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“…[ 27 ] Striking a balance between enhancing mobility and modulating the heterojunction, which significantly affects the performance of phototransistor memory, still presents a challenge. [ 28 ] To overcome these issues, s ‐SWNTs seem to offer a viable solution for surpassing mobility constraints. Furthermore, choosing CPs that can form suitable heterojunctions with s ‐SWNTs for sorting makes it possible to effectively facilitate the transfer of photogenerated excitons.…”

Section: Introductionmentioning

confidence: 99%

Semiconducting Carbon Nanotubes with Light‐Driven Gating Behaviors in Phototransistor Memory Utilizing an N‐Type Conjugated Polymer Sorting

Tung,

Su,

et al. 2024

Small Science

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Semiconducting single‐walled carbon nanotubes (s‐SWNTs) have arisen a growing interest in field‐effect transistors (FETs) due to their advantages, such as lower fabrication temperature, flexibility, and solution processing applicability, compared to traditional silicon‐based FETs. In this study, diversifying the functionality of s‐SWNT‐based FETs is focused on, particularly emphasizing their use in nonvolatile photomemory applications. By selectively wrapping s‐SWNT with n‐type conjugated polymers (CPs), electron‐trapping and photoresponsive capabilities are endowed in the device. After optimizing the structure and aggregating behavior of n‐type CPs, a favorable supramolecular network comprising s‐SWNT and CPs is formed and applied in phototransistor memory. Accordingly, the device exhibits a high memory ratio and window of 105 and 75.7 V, representing its remarkable charge‐storage capabilities. In addition, the device demonstrates decent long‐term stability over 104 s and multilevel memory behavior driven by the varied gate bias or accumulated light‐gating periods. The proposed memory mechanism involves electrical writing and photoerasing processes with the existence of n‐type CPs on s‐SWNT, revealing the underlying principles of charge transfer between their heterojunction interfaces. Herein, this research contributes to developing advanced phototransistor memory, offering a promising avenue for future electronic applications.

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Solution-Processed Organic–Inorganic Semiconductor Heterostructures for Advanced Hybrid Phototransistors

Cited by 15 publications

References 70 publications

Bidirectionally Photoresponsive Optoelectronic Transistors with Dual Photogates for All‐Optical‐Configured Neuromorphic Vision

Bidirectionally Photoresponsive Optoelectronic Transistors with Dual Photogates for All‐Optical‐Configured Neuromorphic Vision

Recent Progress in Wearable Near-Sensor and In-Sensor Intelligent Perception Systems

Semiconducting Carbon Nanotubes with Light‐Driven Gating Behaviors in Phototransistor Memory Utilizing an N‐Type Conjugated Polymer Sorting

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