Silicon (Si) is promising as a field
enhancement material because
of its high abundance, low toxicity, and high refractive index. The
field enhancement effect intensifies light–matter interactions,
which improves photocatalysis, solar cell performance, and sensor
sensitivity. To manufacture field enhancement materials on a production
scale, the fabrication technique must be simple, cost-effective, fast,
and highly reproducible and must produce a high enhancement factor
(EF). Herein, we report on an economical and efficient fabrication
method for a field enhancement substrate consisting of a two-dimensional
Si wire array (2D-SiWA). This substrate was demonstrated as a fluorescence
sensor with high sensitivity (EF > 200) and composed of a large
area
(6.0 mm2). In addition, single wire spectroscopy was used
to identify very high reproducibility of the sensor sensitivity in
regular regions (97%) and a mixture of regular and irregular regions
(87%) of the 2D-SiWA. The large-area Si fluorescence sensor fabrication
was cost-effective and rapid and was 50× less expensive, 20×faster,
and 60,000×larger than the typical electron beam lithography
method.