Solution-Processed Organic Thin-Film Transistor Arrays with the Assistance of Laser Ablation

Abstract

A key step toward commercialization of organic thin-film transistors (OTFTs) is to manufacture large-area OTFT arrays with desired uniform device performance. In this work, for the first time, solution-processed OTFT arrays were fabricated with the assistance of laser ablation. The source-drain electrodes and the whole devices were patterned by precise control of laser intensity and process path. Compared with traditional methods, this approach significantly simplifies the fabrication process of OTFT arrays with high quality and high yield. A careful selection of laser processing parameters is key to obtaining high quality and high performance OTFT arrays. The grazing incidence X-ray diffraction experiments and device performance tests ensured the selection of proper laser ablation intensity. Eventually, the OTFT arrays on silicon wafer and ITO glass exhibited uniform electrical characteristics with the mean mobility of 0.16 and 0.10 cm V s, respectively. These results demonstrated that the laser ablation process provides a promising tool to simplify the fabrication of solution-processed OTFT arrays with low cost and high yield, which has great potential in upscaling of high performance OTFT arrays for display and circuits.

High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

“…High molecular weight π‐extended organic p‐type semiconductor copolymer poly[2,5‐bis(alkyl)pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione‐alt‐5,5′‐ di(thiophen‐2‐yl)‐2,2′‐(E)‐2‐(2‐(thiophen‐2‐yl)vinyl)‐thiophene] (PDVT‐8) ( M w = 50 K, polymer dispersity index (PDI) = 2.4) was obtained from 1‐Materials, which was dissolved in chloroform (10 mg mL −1 ) . Poly(4‐vinylphenol) (PVP) ( M w = 25 000), 4,4′‐(hexafluoroisopropylidene)‐diphthalic anhydride (HDA) (99%), and propylene glycol monomethyl ether acetate (PGMEA) (≥99.5%) were obtained from Sigma‐Aldrich.…”

Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory

“…Meanwhile, it provides a switching polarization to tune the charge transport in semiconductor layer, leading to the widely application of ferroelectric memory in random access memory and data storage devices. [25][26][27] However, the smooth interface between ferroelectric layer and semiconductor layer is needed to ensure the effective carrier migration, whereas the annealing process is indispensable for ferroelectric materials, resulting in the large grain boundary formed during annealing and consequently the high surface roughness, which had adversely effect on the mobility of semiconductor layer [28,29] and thereby limits its potential in the memory market. Meanwhile, floating gate organic nonvolatile transistor memory has attracted enormous attentions due to its lossless reading, advanced data storage mechanism, reliable long-term data retention, and ultra-high storage density.…”

High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

“…To date, a mass of electronic devices have been proposed to simulate the synaptic basic learning function and memory behavior, including two-terminal-based resistive memory devices and three-terminal-based field-effect transistors (FETs). − A thin-film transistor (TFTs)-based synapse device, also known as synaptic transistors, can write information via the gate voltage pulse and read it out through drain voltage simultaneously, making it a better potential candidate for neuromorphic computation compared with two-terminal-based devices. In the past few years, various semiconductor materials have been reported as the active layers of synaptic transistors to simulate synaptic behavior, such as inorganic metal oxide, − organic polymer, , organic small molecule materials, , and two-dimensional (2D) materials. − Among these synaptic devices, transistors with 2D materials as the functional layer have shown great potential to improve device properties because of its unique size advantages that cannot be realized by traditional bulk forms of materials, such as the uniform microstructure and effective gate control. − Traditional 2D materials, such as black phosphorus, MoS 2 , and graphene, with an ultrathin nature of atomic or molecular scaling thickness generally protect device performance from surface defects, scattering, and diffusion, which is ideal to mimic synapses and can boost the development of artificial synaptic technology. , Ren and co-workers have demonstrated a graphene-based synaptic transistor with tunable plasticity .…”