Solution‐Processed Silicane Field‐Effect Transistor: Operation Due to Stacking Defects on the Channel

Abstract

2D silicon nanomaterials have unique potential for use in applications owing to their many different exotic electronic properties. Field-effect transistors are fabricated based on free-standing silicanes through a solution process. Owing to the sensitive surface and the nanometer thickness, the devices require the use of fabrication conditions similar to those of lithium-ion batteries to prevent oxidation of the sheets. Reliable transistor performance is observed at room temperature in a channel thinner than 3 nm, as drain voltage dependent transfer curves current modulation, depending on the edge effect of the silicane, although the transistor property is modest (hole mobility of 1.8 cm 2 V −1 s −1 ). The results suggest the feasibility of other air-sensitive 2D nanomaterials for applications in nanoelectronic devices.

Silicene Applications in Nanotechnology: From Transistors to Bendable Membranes

“…More stable than Xenes in ambient conditions are the Xanes, namely the hydrogenated counterpart of the Xenes, following the nomenclature introduced for graphene with graphane [65]. Silicane and germanane FETs were fabricated by liquid exfoliation method and mechanical cleaving of Li 13 Si 4 and CaGe 2 powders, respectively, showing carriers mobility of 1.8 cm 2 /Vs (hole) and 70 cm 2 /Vs (electron and hole), respectively [50], [51]. Even though these are modest values, their cost-effective synthesis methods strongly suggest further optimization of their production, now limited to micro-scaled flakes.…”

Silicene Applications in Nanotechnology: From Transistors to Bendable Membranes

“…More stable than Xenes in ambient conditions are the Xanes, namely the hydrogenated counterpart of the Xenes, following the nomenclature introduced for graphene with graphane [39]. Silicane and germanane FETs were fabricated by liquid exfoliation method and mechanical cleaving of Li13Si4 and CaGe2 powders, respectively, showing carriers mobility of 1.8 cm 2 /Vs (hole) and 70 cm 2 /Vs (electron and hole), respectively [40], [41]. Even though these are modest values, their cost-effective synthesis methods strongly suggest further optimization of their production, now limited to micro-scaled flakes.…”

Bottom Contact 100 nm Channel‐Length α‐In2Se3 In‐Plane Ferroelectric Memory

“…Recently, we established a fabrication technique for Pt‐based nanogap electrodes and demonstrated 2D silicon nanomaterials of a silicane FET with a 130 nm channel length. [ 32 , 33 ] Aiming to utilize the IP polarization of vdW material α‐In 2 Se 3 , a nanogap structure that allows the application of lateral electric field can have significant implications for the development of next‐generation non‐volatile memory devices and diverse nanoelectronics.…”