2011
DOI: 10.1016/j.synthmet.2010.12.021
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Solution-processed small molecular electron transport layer for multilayer polymer light-emitting diodes

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Cited by 39 publications
(21 citation statements)
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“…[1][2][3][4][5][6][7][8][9][10][11][12] The band alignments between the highest occupied molecular orbital (HOMO) of the EML and the ETLs facilitate hole accumulation and exciton recombination at the interface. [1][2][3][4][5][6][7][8][9][10][11][12] The electron mobilities of each ETL material are investigated by the spacecharge limited current (SCLC) method with the configuration of electron only devices (EODs) in Figure 2. [14][15][16][17] The structure of EODs for each ETL materials is as following; ITO / LiF (1.5 nm) / ETL (100 nm) / LiF (1.5 nm) / Al (100 nm).…”
Section: Resultsmentioning
confidence: 99%
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“…[1][2][3][4][5][6][7][8][9][10][11][12] The band alignments between the highest occupied molecular orbital (HOMO) of the EML and the ETLs facilitate hole accumulation and exciton recombination at the interface. [1][2][3][4][5][6][7][8][9][10][11][12] The electron mobilities of each ETL material are investigated by the spacecharge limited current (SCLC) method with the configuration of electron only devices (EODs) in Figure 2. [14][15][16][17] The structure of EODs for each ETL materials is as following; ITO / LiF (1.5 nm) / ETL (100 nm) / LiF (1.5 nm) / Al (100 nm).…”
Section: Resultsmentioning
confidence: 99%
“…An oxygen plasma treatment was also used to clean the substrate and increase the ITO work function. [1][2][3][4][5][6][7][8][9][10][11] After cleaning, 60-nm-thick HAT-CN and 30-nm-thick N,N-bis-(1-naphthyl)-N, N -diphenyl-1,1 -biphenyl-4,4 diamine (NPB) layers were deposited under high vacuum conditions as the HIL and HTL, respectively. A 40-nm-thich C545T-doped (1%) Alq 3 EML and various (Alq 3 , TAZ, TPBi, or BPhen) 20-nm-thick ETLs were thermally deposited under high vacuum conditions.…”
Section: Methodsmentioning
confidence: 99%
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