Solution-processed small-molecular organic memristor with a very low resistive switching set voltage of 0.38 V

Abstract

Organic memristors are considered to be the next-generation storage element due to their unique advantages of flexibility, transparency, and good solution processability. In this Letter, a Zn-porphyrin based small-molecular organic memristor is prepared by spin-coating with an ultralow resistive switching set voltage of 0.38 V. It is found that the zinc atom in the porphyrin molecule plays a very important role in improving the resistance switching characteristics of organic memristors. By tracking the change in oxygen valence in the vertical dimension, we demonstrate that Zn atom located in the core of porphyrin helps to enhance the oxygen ion migration across the active layer, clearly revealing the memory mechanism of low-cost solution-processed Zn-porphyrin based small-molecular organic memristors. This organic memristor shows excellent memristive performance resulting from rational material design and appropriate device structure engineering.

Organic iontronic memristors for artificial synapses and bionic neuromorphic computing

“…Therefore, developing high-performance OIMs is crucial to advancing the field of organic iontronic memristors and realizing their potential in a range of electronic applications. 43…”

“…to enable information processing, recognition, memorizing and forgetting, learning, and decision-making. 37–45…”

Cyclohepta[def]fluorene as a bistable molecule: first principles studies on its electronic structure and the effects of benzo-extension, substitution and solvation

“…Bistable molecules can serve as molecular memristors which are expected to be relevant for next-generation electronic devices. 7,8…”

Superlow Power Consumption Memristor Based on Borphyrin–Deoxyribonucleic Acid Composite Films as Artificial Synapse for Neuromorphic Computing

“…Bian et al 24 proposed a memristive device with an ITO/porphyrin-based copolymer PZnTPP SFX/AlO x / Al structure that demonstrated various synaptic plasticity characteristics including potentiation and depression plasticity, STDP, and experience-based learning behavior. Wen et al 32 fabricated a memristive device with an Ag/Zn-porphyrin/ WO x /ITO structure that showed bipolar switching characteristics with a switching ratio of ∼10 3 , set voltage of 0.38 V, and reset voltage of −1.8 V. However, characteristics of metalloporphyrin-based memristors such as the switching ratio, power consumption, and bidirectional conductance modulation still need to be further improved to realize synaptic plasticity in analogue neural network-based green computing. Deoxyribonucleic acid (DNA) is a quasi-one-dimensional biological macromolecule comprising a double helix with an aromatic π stacking core.…”

“…Porphyrins are planar π-conjugated macrocyclic organic compounds with good biocompatibility and chemical stability that widely exist in nature and organisms (e.g., chlorophyll, heme, and vitamin B12). − Various substituents can be added to the porphyrin ring to alter its electrical properties and meet the requirements of various applications, especially in organic electronic devices. − Metalloporphyrin is a coordination compound formed by a porphyrin and metal ions, and metalloporphyrin-based electronic devices are particularly responsive to voltage stimulation, which makes them a promising candidate for applications in synaptic bionics and intelligent recognition. , Several metalloporphyrin-based memristors have been proposed for next-generation data storage and artificial synapses. ,,− Ding et al constructed a resistive random access memory device by using Zn-tetrakis (4-carboxyphenyl) porphyrin (Zn-TCPP) nanosheets as the resistive switching (RS) layer that demonstrated bipolar switching characteristics with a switching ratio of ∼10 3 , set voltage of −0.5 V, and reset voltage of 2.4 V. Wang et al fabricated a hybrid heterojunction metalloporphyrin (MTPP)/AlO x memristor that demonstrated unipolar spike voltage-dependent plasticity. Li et al presented a memristive device by using PFI-ZnPor (i.e., a polyfluorene-based conjugated polyelectrolyte with zinc porphyrin incorporated into the main chain) as the functional layer.…”