Solution‐Processed Tin‐Based Perovskite for Near‐Infrared Lasing

Abstract

The family of solution-processed tin-based perovskites is demonstrated as a new and superior near-infrared gain medium. Due to the large electron-hole bimolecular recombination associated with tin and the reduced trap density with SnF treatment, these lead-free "green" perovskites yield stable coherent light emission extending to ≈1 μm at strikingly low thresholds.

Fully‐Inorganic Trihalide Perovskite Nanocrystals: A New Research Frontier of Optoelectronic Materials

“…[141] Specially, with regard to Sn 2+ -containing perovskite NCs (e.g., CsSnX 3 ) and related devices, progress was strongly hampered by the transforming from Sn 2+ to Sn 4+ because Sn 2+ can easily be oxidized into Sn 4+ under ambient conditions. An in-situ protective strategy including introduction of reducing reagent such as tri-n-octylphosphine and hypophosphorous acid, [72,142] as well as additives like SnF 2 and SnBr 2 , [143][144][145][146] can improve the oxygen resistance and increase the stability under operating conditions. [64,110,142] In this case, the conventional coating technique to great extent cannot work efficiently.…”

Lead‐Free Metal Halide Perovskite Nanocrystals: Challenges, Applications, and Future Aspects

“…Although the CsSnX 3 perovskites are unstable in ambient condition and prone to oxidation to more stable Sn 4+ state, the use of strong electron withdrawing group onto NCs surfaces or thin films can improve the stability of Sn(II) valence state ,. Wang et al.…”

All‐Inorganic Hetero‐Structured Cesium Tin Halide Perovskite Light‐Emitting Diodes With Current Density Over 900 A cm−2 and Its Amplified Spontaneous Emission Behaviors

“…As a more environmentally friendly alternative to Pb 2+ , Sn 2+ is a less toxic divalent cation that has drawn quite some attention lately . Although the performance of Sn‐based perovskites investigated so far is inferior to their Pb‐based counterparts, and they also encounter severe stability problems due to the susceptibility of tin oxidation, these CsSnX 3 perovskites possess considerably attractive optoelectronic properties, such as high PL quantum yield, optical gain, and carrier mobility . Especially, the high carrier mobility as high as 585 cm 2 V −1 s −1 enable them to be considered for use in electrically pumped lasing diodes .…”