2018
DOI: 10.1016/j.optmat.2017.11.006
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Solution processed transition metal oxide anode buffer layers for efficiency and stability enhancement of polymer solar cells

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Cited by 23 publications
(12 citation statements)
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“…In addition to the light‐induced molecular change, recent studies indicate that the interlayer can introduce additional degradation pathways to NFA through photocatalytic reactions. [ 185–191 ] It was found that the vinyl group of enone in ITIC can undergo a radical addition reaction with the hydroxyl radicals on the ZnO surface (typical defects under UV light irradiation for low‐temperature and solution processed ZnO), and this ITIC radical intermediate can further decompose to other fragments or attack the enone group of another ITIC molecule to form dimerized ITIC (see evidence in Figure 11 a). Such photocatalytic reaction can retard electron transport and lead to significant local charge accumulation and recombination at the ZnO interface, resulting in reduced FF and V OC and severe burn‐in degradation under 1 sun light soaking with the PCE of encapsulated PBDB‐T:ITIC OSCs losing more than 30% of their initial value within the first 50 h. [ 192 ] This ZnO assisted photocatalytic reaction appears to be a general cause for the severe burn‐in degradation of NFA OSCs, since cutting off the ZnO/active layer contact can rectify the overall device stability.…”
Section: Toward Superior Stability Of Nfa‐based Oscsmentioning
confidence: 99%
“…In addition to the light‐induced molecular change, recent studies indicate that the interlayer can introduce additional degradation pathways to NFA through photocatalytic reactions. [ 185–191 ] It was found that the vinyl group of enone in ITIC can undergo a radical addition reaction with the hydroxyl radicals on the ZnO surface (typical defects under UV light irradiation for low‐temperature and solution processed ZnO), and this ITIC radical intermediate can further decompose to other fragments or attack the enone group of another ITIC molecule to form dimerized ITIC (see evidence in Figure 11 a). Such photocatalytic reaction can retard electron transport and lead to significant local charge accumulation and recombination at the ZnO interface, resulting in reduced FF and V OC and severe burn‐in degradation under 1 sun light soaking with the PCE of encapsulated PBDB‐T:ITIC OSCs losing more than 30% of their initial value within the first 50 h. [ 192 ] This ZnO assisted photocatalytic reaction appears to be a general cause for the severe burn‐in degradation of NFA OSCs, since cutting off the ZnO/active layer contact can rectify the overall device stability.…”
Section: Toward Superior Stability Of Nfa‐based Oscsmentioning
confidence: 99%
“…In view of this, using it as the anode buffer layer (ABL) is favorable for extracting holes. By applying V 2 O 5 in P3HT:PCBM-based conventional OSC, the stability of devices is enhanced because of less degradation of the active layer . Meanwhile, in the inverted OSCs with the same active layer as the former, Muhammad et al found that the V 2 O 5 layer annealed at 165 °C for 5 min achieved the highest PCE of 3.92% .…”
Section: Inorganic Materialsmentioning
confidence: 99%
“…In recent years, a new generation of AILs has been introduced using materials such as metal oxides, [8][9][10] conducting polymers, 11 graphene-based AILs, 12 conductive polyelectrolytes, 13 and cross-linkable materials. 14 Semiconductor metal oxide interlayers can have consistent long-term stability in high-efficiency OSCs.…”
Section: Introductionmentioning
confidence: 99%