Solution-Processed Ultrasensitive Polymer Photodetectors with High External Quantum Efficiency and Detectivity

Abstract

Operating at room temperature, polymer photodetectors (PDs) with external quantum efficiency approximately 80%, detectivity over 10(13) Jones, linear dynamic range over 120 dB, and dark current a few decades of nA/cm(2) were demonstrated. All these performance parameters were achieved by combined treatment of active layer with solvent vapor annealing and of polymer PDs with postproduction thermal annealing. These high performance parameters demonstrated that polymer PDs is comparable to or better than inorganic counterparts.

Fully Inkjet‐Printed Organic Photodetectors with High Quantum Yield

“…Not only the EQE is remarkable for a completely printed photodetector, largely exceeding the only previous example reported in the literature, [ 38 ] but also it is among the best performing P3HT:PC 61 BM photodetectors, irrespective of the deposition technique. [41][42][43][44][45] The device specifi c detectivity is 1.5 × 10 12 cm·Hz 0.5 ·W −1 (at 0.9 V bias, 525 nm), comparable to the literature on inverted P3HT:PC 61 BM spin-coated photodiodes. [ 41 ] Moreover, when tested over a three decades range of incident power density P , the EQE showed a very weak dependence on P (EQE ∝ P −0.065 ), ( Figure 3 a ) , ruling out space charge limited photocurrent regime (which is predicted to give EQE ∝ P −0.75 ) and suggesting an almost balanced charge transport.…”

Work Function Tuning for High‐Performance Solution‐Processed Organic Photodetectors with Inverted Structure

“…As shown in Figure 4 c the linearity curve measured at 520 nm was found to be linear over 7 decades of incident light fl ux from 10 −8 up to 10 −1 lm. This result compares well with other reports on standard photodiode architecture [ 22,23 ] and confi rms that the inverted stack is also well suited to detect a wide range of incident power. The dynamic response to a pulsed incident light is also an important parameter.…”

Solution-processed semiconductors for next-generation photodetectors

“…7 Special attention needs to be taken when estimating the LDR from log-log plots since this could otherwise potentially result in its overestimation. [15][16][17][18][19][20] Ultimately, the sensitivity of a photodetector is given by its ability to deliver enough signal to noise ratio (SNR) with respect to the noise spectral density (SN). The noise equivalent power (NEP) represents the incident power that would be required to yield a near-unity SNR over one Hertz bandwidth.…”