“…As shown in Figure 5b,Device Dshows ablue emission band at % 470 nm coming from BD-Cy,and ayellow emission band at % 550 nm from YD-TF,leading to white electroluminescence with CIE coordinates of (0.32, 0.45) at 5V .Asthe voltage increases,the relative intensity of blue emission to yellow emission is increased, accompanied by CIE coordinates moving to (0.31, 0.42) at 8V .R emarkably,D evice Dr eveals al ow turn-on voltage (V on )o f2 .8 Vt ogether with high device efficiency with the maximum LE (LE max )of57.6 cd A À1 ,maximum EQE (EQE max )of20.6 %and maximum PE (PE max )of58.9 lm W À1 , representing the state-of-the-art efficiency for solution-processed all-TADF white OLEDs (Table S6). [33][34][35][36][37][38][39][40][41] ForDevice E with 20 wt %BD-Cy and 1wt% YD-TF as emitter, the CIE coordinates move to (0.32, 0.44) at the voltage of 8V . Meanwhile,t he device efficiencies decline to 55.2 cd A À1 , 19.2 %and 55.6 lm W À1 for LE max ,EQE max and PE max, respectively due to exciton quenching at high dopant concentration.…”