Solution-processed Y-doped SnSrO3 electron transport layer for Ga2O3 based heterojunction solar-blind photodetector with high sensitivity

Wu, Chao; Wu, Fengmin; Deng, Lipeng; Li, Shan; Wang, Shunli; Cheng, Lin; Liu, Aiping; Wang, Jinbin; Tang, Weihua; Guo, Daoyou

doi:10.1016/j.vacuum.2022.111064

Cited by 28 publications

(14 citation statements)

References 48 publications

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“…The absorbance and transmittance of each thin film grown on sapphire were measured by a UV−visible spectrophotometer (Perkin Elmer LAMBDA 265). 29,30 The monochromatic light sources used in the measurement were 255, 310, 404, 532, and 635 nm, respectively.…”

Section: Methodsmentioning

confidence: 99%

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Huang

Lin

et al. 2023

ACS Appl. Electron. Mater.

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Aluminum nitride (AlN) has been proven as a potential photoelectric material with high breakdown field strength, excellent thermal conductivity, and stable physical properties. However, its ultrawide intrinsic band gap (6.2 eV) prohibits the direct application of AlN as an optical absorption layer for solar-blind ultraviolet (SBUV) detectors. To solve this problem, AlYN thin films with a SBUV absorption cut-off edge of 264 nm were prepared first by energy band engineering using yttrium (Y) as the dopant, based on which a photovoltaic detector with a p-Gr/i-AlYN/n-Si structure was fabricated and exhibited excellent performance of SBUV detection at 0 V bias, including an extremely short rise time (t r) of 20 ms, a decay time (t d) of 60 ms, an ultrahigh detectivity (D*) of 5.09 × 1012 Jones, a responsivity (R) of 13 mA/W, a maximum external quantum efficiency (EQE) of 6.69%, and a rejection ratio (R 255nm/R 310nm) of 245. This work has great value as a reference for the preparation of high-performance AlN-based SBUV detectors.

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Section: Methodsmentioning

confidence: 99%

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Huang

Lin

et al. 2023

ACS Appl. Electron. Mater.

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“…As an essential component of spectrum detectors, the deep-ultraviolet (DUV, 200–280 nm) photodetector has a variety of vital uses, including in missile tracking, navigation, communication, and monitoring. − Despite their low price and maturity in technology, traditional silicon-based DUV photodetectors have limited responsivity to DUV light, a small penetration depth for high-energy ultraviolet photons, and a low filtration dependency on such photons. Recently, wide-bandgap semiconductors such as MgZnO, , AlGaN, , diamond, − and Ga 2 O 3 − have been considered alternatives to Si in advanced DUV photodetectors. Ga 2 O 3 is the most ideal option for DUV photodetector applications among the numerous wide-bandgap semiconductors because of its ultrawide bandgap (4.5–4.9 eV), strong UV photon absorption coefficient, high structural stability, and affordability.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale-Thick CuPc/β-Ga₂O₃ p–n Junctions for Harsh-Environment-Resistant Self-Powered Deep-UV Photodetectors

Zhao

Guo

et al. 2023

ACS Appl. Nano Mater.

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Due to their crucial role in ultraviolet communication and monitoring, deep-ultraviolet (DUV) photodetectors have garnered much interest. Recently, Ga2O3 has emerged as the best material for DUV photodetectors because of its ultrawide bandgap (4.5–4.9 eV), excellent UV photon absorption coefficient, high structural stability, and affordability. However, there are several difficulties in realizing high-performance Ga2O3-based DUV photodetectors with a high tolerance for harsh environments. In this work, nanoscale-thick CuPc/β-Ga2O3 p–n junctions were used to build high-performance DUV photodetectors by a straightforward solution-processing approach. The p–n junction photodetectors exhibit improved photoelectric performance compared to a single device made of β-Ga2O3 or CuPc, with a photo-to-dark current ratio of 3700 and a fast response time of ∼20 ms under a bias of 0 V. Due to the excellent stability of the nanoscale-thick CuPc film, the device can maintain a high photocurrent even at high temperatures or under long-term DUV irradiation. Our work provides an effective strategy toward highly harsh-environment-resistant DUV photodetectors.

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“…Unlike commercially available UV PDs based on narrow-band-gap semiconductor materials such as Si and GaAs, they do not require any additional optical filter or large cooling systems. ,− Among these, β-Ga 2 O 3 has received a lot of attention because of its excellent material properties such as an ultrawide direct band gap of about 4.9 eV, superior radiation hardness, high chemical and thermal stability, and high absorption coefficient (>10 5 cm –1 ). In addition, to date, high-crystalline-quality Ga 2 O 3 single-crystal substrates, epilayers, and thin films could be grown quite maturely and cost-effectively by various melt growth and thin-film techniques including edge-defined film-fed growth (EFG), Czochralski (CZ) method, MOCVD, halide vapor-phase epitaxy (HVPE), atomic layer deposition (ALD), pulsed laser deposition (PLD), and molecular beam epitaxy (MBE) without any doping complexity in comparison to other wide and ultrawide-band-gap semiconductor materials. − Apart from the β-phase, DUV PDs have also been demonstrated on amorphous and ε-phases of Ga 2 O 3 . ,,− …”

Section: Introductionmentioning

confidence: 99%

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities

Sheoran

Fang

Liang

et al. 2022

ACS Appl. Mater. Interfaces

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In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal−organic chemical vapor deposition (MOCVD)-grown β-Ga 2 O 3 heteroepitaxy that exhibit stable operation up to 125 °C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-todark-current ratio (PDCR) of the order of 10 5 at zero bias and >10 5 at higher biases of 5 and 10 V, which remains almost constant up to 125 °C. The high responsivity of 6.62 A/W is obtained at 10 V at room temperature (RT) under the weak illumination of 42.86 μW/cm 2 of 260 nm wavelength. The detector shows very low noise equivalent power (NEP) of 5.74 × 10 −14 and 1.03 × 10 −16 W/Hz 1/2 and ultrahigh detectivity of 5.51 × 10 11 and 3.10 × 10 14 Jones at 0 and 5 V, respectively, which shows its high detection sensitivity. The RT UV−visible (260:500 nm) rejection ratios of the order of 10 3 at zero bias and 10 5 at 5 V are obtained. These results demonstrate the potential of Ga 2 O 3 -based DUV PDs for solar-blind detection applications that require high-temperature robustness.

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Solution-processed Y-doped SnSrO3 electron transport layer for Ga2O3 based heterojunction solar-blind photodetector with high sensitivity

Cited by 28 publications

References 48 publications

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Nanoscale-Thick CuPc/β-Ga₂O₃ p–n Junctions for Harsh-Environment-Resistant Self-Powered Deep-UV Photodetectors

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities

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Solution-processed Y-doped SnSrO3 electron transport layer for Ga2O3 based heterojunction solar-blind photodetector with high sensitivity

Cited by 28 publications

References 48 publications

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Band Gap Engineering of AlYN Films for Solar-Blind Ultraviolet Photodetection

Nanoscale-Thick CuPc/β-Ga2O3 p–n Junctions for Harsh-Environment-Resistant Self-Powered Deep-UV Photodetectors

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities

Contact Info

Product

Resources

About

Nanoscale-Thick CuPc/β-Ga₂O₃ p–n Junctions for Harsh-Environment-Resistant Self-Powered Deep-UV Photodetectors

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities