Solution-Processed ZnxCd1–xS Buffer Layers for Vapor Transport-Deposited SnS Thin-Film Solar Cells: Achieving High Open-Circuit Voltage

Pawar, Pravin S.; Cho, Jae Yu; Eswar, Neerugatti KrishnaRao; Sinha, Soumyadeep; Rana, Tanka Raj; Ahn, SeJin; Heo, Jaeyeong

doi:10.1021/acsami.9b14329

Cited by 27 publications

(19 citation statements)

References 47 publications

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“…In addition, Table 2 shows the detailed photovoltaic characteristics of the SnS solar cells, i.e., series resistance (R S ), shunt resistance (R Sh ), ideality factor of a diode (n), and the reverse saturation current (J 0 ), which were obtained from the J-V relationship of the single-junction solar cells (Section S2, Supporting Information), [29] together with the thickness of SnS layer (d). As shown in Table 2, the V OC of the homojunction solar cells fabricated in this study was remarkably high after the heterojunction solar cells fabricated by Pawar et al in 2020 ((V OC ¼ 405 mV with η ¼ 3.72%), [16] The properties of undoped SnS thin film are those of the film deposited on the SiO 2 glass substrate under the same conditions as the films deposited on the n-type SnS single crystals; b) The study by Kawanishi et al [22] Chua et al in 2019 ((V OC ¼ 400 mV with η ¼ 2.21%), [15] and Sinsermsuksakul et al in 2014 ((V OC ¼ 372 mV with η ¼ 4.4%). [13] To investigate the built-in potential (V bi ), acceptor and donor concentrations (N A and N D , respectively), and the depletion region of the n-type and p-type layers (w n and w p , respectively), the capacitance-reverse bias voltage (C-V ) characteristics were analyzed using Equation ( 1) and ( 2)…”

Section: Photovoltaic Properties Of Sns Homojunction Solar Cellmentioning

confidence: 53%

“…However, despite significant efforts to improve the V OC , the highest V OC is still limited to ≈400 mV, resulting in conversion efficiency ( η) of 2−4%. [ 15,16 ] A recent study reported a η of 4.8% with a V OC of 330 mV for a p‐SnS/n‐TiO 2 heterojunction, [ 17 ] which is the highest reported value for any SnS‐containing solar cells; however, this value is much lower than the theoretical value of SnS homojunction solar cell ( η = 25% at a V OC of 985 mV). [ 18 ] This implies that a further increase in the V OC of SnS heterojunction solar cell is considerably difficult.…”

Section: Introductionmentioning

confidence: 99%

“…For example, the CBO of the heterojunctions between p-type SnS and n-type CdS is À0.5 eV, [8] which results in a small V OC (<300 mV). [2,9,10] Interface band engineering, which involves the use of n-type materials such as Zn(O,S), [11,12] Zn(O,S):N, [13] Zn 1-x Mg x O, [14] (Sn,Ge)O 2 , [15] and (Zn,Cd)S [16] has been introduced as an effective method to modify the CBO of p-type SnS. However, despite significant efforts to improve the V OC , the highest V OC is still limited to %400 mV, resulting in conversion efficiency (η) of 2À4%.…”

Section: Introductionmentioning

confidence: 99%

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SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film

et al. 2021

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Herein, a pn homojunction SnS solar cell is fabricated for the first time by the deposition of p‐type SnS polycrystalline thin films on the recently reported large n‐type SnS single crystals. The p‐type thin films consist of columnar grains that grow along the <100> direction, which is the same orientation as the n‐type single crystal. In addition, the interface of the pn homojunctions is void‐free and compositionally sharp. The SnS homojunction solar cell achieves an open‐circuit voltage (VOC) of 360 mV, which is as large as the highest VOC of previously reported SnS‐based heterojunction solar cells. The built‐in potential of the homojunction cell is 0.92 eV, which is close to the bandgap energy of SnS (≈1.1 eV), and larger than reported for heterojunctions (≈0.7 eV). The resulting 1.4% conversion efficiency (η) of the homojunction solar cell is smaller than the record 4–5% in heterojunctions, mainly due to the low short‐circuit current density (JSC) of 7.5 mA cm−2. Once the device structure of the homojunction cell is optimized to efficiently collect the photogenerated carriers and achieve a comparable JSC as the conventional heterojunction cells (≈25 mA cm−2), high η exceeding 4–5% will be realized with improving the VOC.

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Section: Photovoltaic Properties Of Sns Homojunction Solar Cellmentioning

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film

et al. 2021

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“…Recently, SnS/2D nanomaterial hybrids in a sandwiched model were also intensively investigated for targeted applications, such as high-performance solar cells, [133][134][135][136] and electronic devices. [137][138][139][140] For instance, in 2018, the facile morphology control of anisotropic SnS was realized via regulated growth kinetics during vapor transport deposition (VTD), and SnS/2D CdS heterostructure-based thin film solar cells were fabricated to study the impact of the SnS morphology.…”

Section: Sandwiched Modelmentioning

confidence: 99%

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Zhu

et al. 2021

Small Science

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Tin-based binary chalcogenide Sn-X (X ¼ S, Se, Te) compounds have attracted extensive interest in the optical, optoelectronic, catalysis, and flexible systems due to their intriguing performances. [1][2][3][4][5][6][7] The Sn-X (X ¼ S, Se, Te) compounds are typically layered materials and usually have three crystalline phases: hexagonal, monoclinic, and orthorhombic; orthorhombic phase is denoted by chemical formula SnX, and hexagonal and monoclinic phases are labeled as SnX 2 . [8] Until now, SnSe and SnTe compounds have already achieved great progress in many fields, especially for thermoelectronics and ferroelectrics, [9][10][11][12] and many important reviews have been reported on SnSe and SnTe compounds due to their rapid development. [8,[13][14][15][16] For example, in 2020, Chen et al. [14] summarized a comprehensive overview of controlled synthesis, characterization, and thermoelectric performance in SnSe. In 2018, Shi et al. [8] summarized the growth, characterization, and applications (photovoltaics, supercapacitors, rechargeable batteries, phase-change memory devices, and topological insulator) of SnSe. In 2018, Li et al. [15] reviewed the development of SnS, SnSe, and SnTe, mainly focusing on the controllable tuning of the electron and phonon transport as well as the challenges for further optimization and practical applications. Among Sn-X (X ¼ S, Se, Te) compounds, tin monosulfide (SnS) as a typical black phosphorus analogue, has also received intensive scientific attention due to its unique properties, such as inexpensive, sustainable, suitable bandgap between Si (1.12 eV) and GaAs (1.43 eV), [17] high absorption coefficient (10 À4 cm À1 ), [18] strong mechanical properties, and anisotropic optoelectronic, [19][20][21] which are of great value in optoelectronics, catalysis, sensors, and nanomedicines. [7,[22][23][24][25][26][27] In addition, layered SnS with suitable spacing structures hold promising potentials in the field of lithium (Li)-ion batteries and sodium (Na)-ion batteries due to their relatively high electrical conductivity and theoretical capacity. [28][29][30][31][32] However, although popular SnS has achieved great progress in a variety of fields, few comprehensive reviews have hitherto focused on the field of SnS-based nanostructures and their fascinating applications.Inspired by important reviews on SnSe reported by Chen [14] and Li [8] in recent years, we comprehensively summarized the synthesis, characterization, and the latest progress of SnS-based nanostructures, as shown in Figure 1. First, the most commonly employed techniques (hydrothermal, vapor deposition, electrostatic assembly, etc.) for preparing SnS and SnS-based nanostructures are presented in detail with their recent progress. Furthermore, the fundamental properties (crystal structure, electronic band structure, optical property, and Raman spectroscopy) and diverse applications (batteries, solar cells, catalysis, optoelectronics, sensors, ferroelectrics, thermoelectrics, nonlinear properties, and biomedical applicatio...

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“…Recently, some studies have shown that doping of SnS with aluminum (Al), iron (Fe), indium (In), copper (Cu) and silver (Ag) can enhance its photovoltaic properties [8][9][10][11][12]. Doped and undoped SnS lms can be deposited by several techniques such as RF magnetron sputtering [8], vapor transport deposition (VTD) [13], e-beam evaporation [14], thermal evaporation [15], electrodeposition [10], chemical bath depositions [7], spray pyrolysis [12]. However, very few studies that investigate the effect of Cu doping on the physical properties of large cubic phase of SnS by spray pyrolysis exist in the literature.…”

Section: Introductionmentioning

confidence: 99%

Investigation of spray pyrolyzed cubic structured Cu doped SnS films

Sarica

2021

Phosphorus, Sulfur, and Silicon and the Related Elements

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In this work undoped and Cu doped SnS lm at 4% and 8% were deposited onto glass substrates by spray pyrolysis technique in order to investigate the effect of Cu doping on their physical properties. Surface investigations showed that Cu doping reduced the surface roughness of SnS lms from 36.5 nm to 8.8 nm. XRD studies revealed that all lms have recently solved large cubic phase of SnS (p-SnS) with alattice of 11.53 Å and Cu doping led to reduction in crystallite size from 229 Å to 198 Å. Additionally, all deposited lms were found to be under compressive strain. Optical band gaps of SnS:Cu varied in the range of 1.83 eV-1.90 eV. Hall-effect measurements exhibited that all lm have p-type conductivity with low hole concentration (~10 11 -10 12 cm -3 ) and high electrical resistivity (~10 4 -10 5 Ωcm).

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Solution-Processed Zn_xCd_1–xS Buffer Layers for Vapor Transport-Deposited SnS Thin-Film Solar Cells: Achieving High Open-Circuit Voltage

Cited by 27 publications

References 47 publications

SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film

SnS Homojunction Solar Cell with n‐Type Single Crystal and p‐Type Thin Film

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Investigation of spray pyrolyzed cubic structured Cu doped SnS films

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