2018
DOI: 10.1021/jacs.8b11656
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Solution Processing for Lateral Transition-Metal Dichalcogenides Homojunction from Polymorphic Crystal

Abstract: Homojunctions comprised of transition-metal dichalcogenides (TMD) polymorphs are attractive building blocks for next-generation two-dimensional (2D) electronic circuitry. However, the synthesis of such homojunctions, which usually involves elaborate manipulation at the nanoscale, still remains a great challenge. Herein, we demonstrated a solution-processing strategy to successfully harvest lateral semiconductor–metal homojunctions with high yield. Specially, through precisely controlled lithiation process, pre… Show more

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Cited by 30 publications
(36 citation statements)
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“…[89] The mechanism was explained by the electron transfer from alkali metal to MoS2 increasing the stability of the metallic phase of MoS2, and also significantly decreasing the kinetic energy barrier for the phase transition. [90] By precisely controlling the intercalation process, metallicsemiconducting 1T (or 1T')-2H MoS2 [91][92] and 2H-1T TaS2 [93] homostructures were prepared by chemically exfoliating the corresponding bulk materials. To enhance the spatial controllability of the ion intercalation process, it could be directly performed on 2D flakes located on a certain substrate (like the CVD samples), combined with patterning techniques like e-beam lithography.…”
Section: Post Treatment Induced Phase Transitionsmentioning
confidence: 99%
“…[89] The mechanism was explained by the electron transfer from alkali metal to MoS2 increasing the stability of the metallic phase of MoS2, and also significantly decreasing the kinetic energy barrier for the phase transition. [90] By precisely controlling the intercalation process, metallicsemiconducting 1T (or 1T')-2H MoS2 [91][92] and 2H-1T TaS2 [93] homostructures were prepared by chemically exfoliating the corresponding bulk materials. To enhance the spatial controllability of the ion intercalation process, it could be directly performed on 2D flakes located on a certain substrate (like the CVD samples), combined with patterning techniques like e-beam lithography.…”
Section: Post Treatment Induced Phase Transitionsmentioning
confidence: 99%
“…Systems based on ferroelectric–semiconductor, typically requiring an external energy for polarization pretreatment, also suffers from a limitation of degeneration with the polarized built‐in electric field over time . “Crystal plane engineering” is an efficient method for exposing different crystal planes in a nanoparticle, which aids in achieving difference surface potentials at various planes ascribed to the varied atomic arrangements . Using this strategy, a polarizing electric field can be induced between crystal planes.…”
mentioning
confidence: 99%
“…[ 34,35 ] To this end, 1T‐2H‐TaS 2 homojunction monolayers were successfully fabricated via a solution‐process method ( Figure a). [ 36 ] Through precise control of the lithiation procedure for 1T‐TaS 2 crystals, 1T phase maintained at low Li content, whereas converted to metallic 2H‐TaS 2 phase at high Li content regions. 1T‐2H‐TaS 2 homojunction monolayers can be obtained by a programmed exfoliation of this polymorphic crystals with 1T and 2H phases using H 2 O and acids.…”
Section: Surface/interface Chemistry Engineering Of Phase Transitionsmentioning
confidence: 99%
“…Reproduced with permission. [ 36 ] Copyright 2019, American Chemical Society. b) Schematic structure of the TaS 2 −N 2 H 4 hybrid superlattice.…”
Section: Surface/interface Chemistry Engineering Of Phase Transitionsmentioning
confidence: 99%