Solution synthesis and characterization of n-type zinc indium selenide films for the buffer layer used in Cu(In,Ga)Se2 solar cells

Lin, Sung-En; Lu, Chung‐Hsin

doi:10.1007/s10854-014-2065-1

Cited by 2 publications

(1 citation statement)

References 28 publications

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“…The diode parameters of the obtained solar cells were characterized using the following equation,

J = J_{0} {normale}^{\frac{q}{A k T} false(V - R_{s} J false)} - J_{0} - J_{normalsc} + G V,

…”

Section: Resultsmentioning

confidence: 99%

Microstructures and photovoltaic performances of bismuth‐ion doped Cu(In,Ga)Se₂ films prepared via sputtering process

Lin

2018

J Am Ceram Soc

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Bismuth‐ion doped Cu(In,Ga)Se2 (CIGS) solar cells were fabricated via sputtering technique. The influence of bismuth‐ion doping on structural and photovoltaic characteristics of the fabricated CIGS films were explored in details. With doping of bismuth ions, the grain sizes of CIGS layers were enhanced appreciably due to liquid‐phase sintering with the yielded intermediate compound. The secondary ion mass spectroscopy profile results indicated that the diffusion of bismuth ions into CIGS layers promoted dissemination of gallium species from the back contacts to the surface of CIGS layers. According to Hall measurement analysis, the carrier concentration in CIGS films was enhanced significantly with the doping of bismuth ions in the prepared films. The conversion efficiency of the bismuth‐ion doped samples was increased approximately 10% in comparison with undoped samples due to the elevated gallium‐ion diffusion and grain growth. Various photovoltaic parameters including saturated current and diode factors of the prepared doped CIGS solar cells were decreased owing to the inhibition of electron‐hole recombination. This investigation demonstrated the improved photovoltaic performance and the structural characteristics of fabricated CIGS films after the doping of bismuth ions.

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“…The diode parameters of the obtained solar cells were characterized using the following equation,

J = J_{0} {normale}^{\frac{q}{A k T} false(V - R_{s} J false)} - J_{0} - J_{normalsc} + G V,

…”

Section: Resultsmentioning

confidence: 99%

Microstructures and photovoltaic performances of bismuth‐ion doped Cu(In,Ga)Se₂ films prepared via sputtering process

Lin

2018

J Am Ceram Soc

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(Ag,Cu)(In,Ga)Se2 thin films fabricated on flexible substrates via non-vacuum process

2017

J Mater Sci: Mater Electron

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Solution synthesis and characterization of n-type zinc indium selenide films for the buffer layer used in Cu(In,Ga)Se2 solar cells

Cited by 2 publications

References 28 publications

Microstructures and photovoltaic performances of bismuth‐ion doped Cu(In,Ga)Se₂ films prepared via sputtering process

Microstructures and photovoltaic performances of bismuth‐ion doped Cu(In,Ga)Se₂ films prepared via sputtering process

(Ag,Cu)(In,Ga)Se2 thin films fabricated on flexible substrates via non-vacuum process

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Solution synthesis and characterization of n-type zinc indium selenide films for the buffer layer used in Cu(In,Ga)Se2 solar cells

Cited by 2 publications

References 28 publications

Microstructures and photovoltaic performances of bismuth‐ion doped Cu(In,Ga)Se2 films prepared via sputtering process

Microstructures and photovoltaic performances of bismuth‐ion doped Cu(In,Ga)Se2 films prepared via sputtering process

(Ag,Cu)(In,Ga)Se2 thin films fabricated on flexible substrates via non-vacuum process

Contact Info

Product

Resources

About

Microstructures and photovoltaic performances of bismuth‐ion doped Cu(In,Ga)Se₂ films prepared via sputtering process

Microstructures and photovoltaic performances of bismuth‐ion doped Cu(In,Ga)Se₂ films prepared via sputtering process