Multiple-resonance thermally activated
delayed fluorescence (MR-TADF)
emitters are becoming increasingly attractive due to their applications
in high-resolution organic light-emitting diode (OLED) display technology.
Here, we present an investigation on the photophysics of two MR-TADF
emitters (t-DABNA and TBN-TPA) by using quantum chamical calculation
and ultrafast transient absorption (TA) spectroscopy. Compared with
one-step structural planarization of t-DABNA, TBN-TPA undergoes two-step
relaxation in S1 state, i.e., fast twisting of the peripheral
group and subsequent restrained planarization of the B-N framework.
The efficient twisting motion of the peripheral group largely reduces
the energy level of the TBN-TPA system and correspondingly increases
the barrier for subsequent planarization, which is favored for the
narrowband emission. Our work provides a detailed picture for the
excited-state deactivation of peripheral group-modified MR-TADF emitters
without a pronounced charge-transfer (CT) characteristic mixed in
the lowest-lying fluorescent state, which might be helpful for the
future design of narrowband OLED emitters.