For decades, photoinhibited two-photon
lithography (PI-TPL) has
been continually developed and applied into versatile nanofabrication.
However, ultrahigh precision fabrication on wafer by PI-TPL remains
challenging, due to the lack of a refractive index (n) matched photoresist (Rim-P) with effective photoinhibition capacity
for dip-in mode. In this paper, various Rim-P are developed and then
screened for their applications in PI-TPL. In addition, different
lithography methods (in terms of oil-mode and dip-in mode) are analyzed
by use of optical simulations combined with experiments. Remarkably,
one type of Rim-P (n = 1.518) shows effective photoinhibition
capacity, which represents an outstanding breakthrough in the field
of PI-TPL. In contrast to photoresist with an unsuitable refractive
index, optical aberrations are almost completely eliminated in the
dip-in mode by using the Rim-P. Consequently, features with a minimum
critical dimension as small as 39 nm are successfully achieved on
wafer by dip-in PI-TPL, which paves the way for subdiffraction silicon-based
chip manufacturing by PI-TPL. Moreover, through a combination of the
Rim-P and dip-in mode, the ability to achieve tall and high-precision
three-dimensional nanostructures is no longer problematic.