Solvent Annealing of Perovskite‐Induced Crystal Growth for Photovoltaic‐Device Efficiency Enhancement

Xiao, Zhengguo; Dong, Qingfeng; Bi, Cheng; Shao, Yuchuan; Yuan, Yongbo; Huang, Jinsong

doi:10.1002/adma.201401685

Cited by 1,605 publications

(1,511 citation statements)

References 28 publications

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“…1a. The MAPbI 3 layers were formed by a low-temperature solution process, interdiffusion of lead iodide (PbI 2 ) and a methyl ammonium iodide (CH 3 NH 3 I, CH 3 NH 3 ¼ MA) stacking layer followed by a solvent annealing process, which was recently developed in our research group 17,18 . It forms smooth, compact perovskite films with 100% surface coverage and gives extremely small low leakage current on the order of 10 À 4 B10 À 3 mA cm À 2 .…”

Section: Resultsmentioning

confidence: 99%

Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

et al. 2014

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The large photocurrent hysteresis observed in many organometal trihalide perovskite solar cells has become a major hindrance impairing the ultimate performance and stability of these devices, while its origin was unknown. Here we demonstrate the trap states on the surface and grain boundaries of the perovskite materials to be the origin of photocurrent hysteresis and that the fullerene layers deposited on perovskites can effectively passivate these charge trap states and eliminate the notorious photocurrent hysteresis. Fullerenes deposited on the top of the perovskites reduce the trap density by two orders of magnitude and double the power conversion efficiency of CH 3 NH 3 PbI 3 solar cells. The elucidation of the origin of photocurrent hysteresis and its elimination by trap passivation in perovskite solar cells provides important directions for future enhancements to device efficiency.

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Section: Resultsmentioning

confidence: 99%

Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

et al. 2014

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“…20 The shunt resistance R sh in the dark and under illumination was derived from the slope of the J−V curve at zero voltage. 24 and lead halide perovskites 25 ), contributing to enhanced device performances due to reduced charge carrier recombination losses at grain boundaries. Similarly, we have found HT treatments of the SnS absorber films to result in significant grain growth and increased charge-carrier transport properties.…”

Section: Experimental Methodsmentioning

confidence: 99%

A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System

Steinmann

Chakraborty

Rekemeyer

et al. 2016

ACS Appl. Mater. Interfaces

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As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due to pinholes in the absorber layer, producing "false-negative" results. Here, we demonstrate a device engineering solution toward a robust device architecture, using a two-step absorber deposition approach. We use tin sulfide (SnS) as a test absorber material. The SnS bulk is processed at high temperature (400°C) to stimulate grain growth, followed by a much thinner, low-temperature (200°C ) absorber deposition. At a lower process temperature, the thin absorber overlayer contains significantly smaller, densely packed grains, which are likely to provide a continuous coating and fill pinholes in the underlying absorber bulk. We compare this two-step approach to the more standard approach of using a semi-insulating buffer layer directly on top of the annealed absorber bulk, and we demonstrate a more than 3.5× superior shunt resistance R sh with smaller standard error σ Rsh . Electron-beam-induced current (EBIC) measurements indicate a lower density of pinholes in the SnS absorber bulk when using the two-step absorber deposition approach. We correlate those findings to improvements in the device performance and device performance reproducibility.

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“…In this regard, combination of solvent and dopants have been tested, such as: the introduction of different source of metal or the solvent, the utilization of single or mixed solvent,19, 20 a variety of lead salt precursors,21, 22 as well as so‐called engineering step23 or the exotic additive: ionic liquid,24 Lewis base25, 26, 27 or other organic and inorganic additives (MACl,28 Guanidinium,29 water,30, 31 H 3 PO 2 ,32, 33 1,8‐diiodooctane (DIO),34 1‐chloronaphthalene (CN),35 hydroiodic acid (HI),36, 37 aluminum acetylacetonate (Al‐acac 3 ),38 LiI,39 Na + 40 etc. ), which induce the nucleation and crystallization process of perovskite thin films.…”

Section: Introductionmentioning

confidence: 99%

“…), which induce the nucleation and crystallization process of perovskite thin films. Another method is based on solvent vapor fumigation‐induced technology using the pyridine,41 water vapor,42, 43 DMF (anhydrous N , N ‐dimethylformamide)43, 44, 45 and so on, which provide some successful cases by adjusting the recrystallization process of the perovskite film. Both above techniques have been demonstrated to improve film quality directly or indirectly, allowing for the formation of much smoother films with higher surface coverage.…”

Section: Introductionmentioning

confidence: 99%

Alkali Metal Doping for Improved CH₃NH₃PbI₃ Perovskite Solar Cells

et al. 2017

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Organic–inorganic hybrid halide perovskites are proven to be a promising semiconductor material as the absorber layer of solar cells. However, the perovskite films always suffer from nonuniform coverage or high trap state density due to the polycrystalline characteristics, which degrade the photoelectric properties of thin films. Herein, the alkali metal ions which are stable against oxidation and reduction are used in the perovskite precursor solution to induce the process of crystallization and nucleation, then affect the properties of the perovskite film. It is found that the addition of the alkali metal ions clearly improves the quality of perovskite film: enlarges the grain sizes, reduces the defect state density, passivates the grain boundaries, increases the built‐in potential (V bi), resulting to the enhancement in the power conversion efficiency of perovskite thin film solar cell.

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Solvent Annealing of Perovskite‐Induced Crystal Growth for Photovoltaic‐Device Efficiency Enhancement

Cited by 1,605 publications

References 28 publications

Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System

Alkali Metal Doping for Improved CH₃NH₃PbI₃ Perovskite Solar Cells

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Solvent Annealing of Perovskite‐Induced Crystal Growth for Photovoltaic‐Device Efficiency Enhancement

Cited by 1,605 publications

References 28 publications

Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells

A Two-Step Absorber Deposition Approach To Overcome Shunt Losses in Thin-Film Solar Cells: Using Tin Sulfide as a Proof-of-Concept Material System

Alkali Metal Doping for Improved CH3NH3PbI3 Perovskite Solar Cells

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Alkali Metal Doping for Improved CH₃NH₃PbI₃ Perovskite Solar Cells