Solvent-assisted sulfur vacancy engineering method in MoS₂ for a neuromorphic synaptic memristor

Abstract

Novel solvent-assisted vacancy engineering (SAVE) is proposed for S vacancy generation in MoS2, considering the solubility and polarity of the solvent. The SAVE-treated MoS2 synaptic memristor shows non-volatile memory characteristics and synaptic behavior.

Unveiling the Role of Side Chain for Improving Nonvolatile Characteristics of Conjugated Polymers‐Based Artificial Synapse

“…[ 8 , 9 , 10 , 11 ] Memristors possess memory and switching functions, making them suitable for use in artificial synapses mimicking neurotransmission. [ 12 , 13 , 14 , 15 ] However, owing to structural limitations and sneak‐path problems, [ 16 , 17 ] neural transmission cannot be controlled precisely by external stimuli. Instead, memtransistors, which are three‐terminal devices with extra controllability, enabling efficient biofunctionalization [ 18 ] with a wide range of electrical modulation, [ 19 ] making them very promising for artificial synapses.…”

Enhanced Anion Interaction by Polarity Control on CNTVT:SVS Copolymers for Improving Nonvolatile Characteristics in Neuromorphic Computing

“…However, achieving such outstanding performance often comes at the cost of high-power consumption, necessitating high-performance hardware and robust power supplies to manage complex computations and large data volumes. Various synaptic devices, such as memristors and memtransistors, have been reported to mimic the human brain for processing large amounts of data. − Memristors are essentially two-terminal devices that resemble biological synapses. − However, the absence of gate tunability makes it difficult to achieve precise neuromorphic learning, and it also allows sneak paths for current to flow in unwanted directions. , In contrast, memtransistors, as three-terminal devices, offer a distinct advantage over memristors by enabling the precise emulation of synaptic functions through gate tunability. This capability, which cannot be achieved using memristors, makes memtransistors highly promising candidates for the development of artificial synapses. , In particular, electrolyte gate transistors (EGTs), which use an ionic electrolyte as the gate layer, utilize the high capacitance of the electrolyte based on its high ionic conductivity to enable synaptic functions at low operating voltages. − …”