2020
DOI: 10.1021/acs.jpcc.0c03626
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Solvent Vapor Annealing Guides Molecules to Form a Desired Stacking Mode According to the Characteristics of the Molecular Structure

Abstract: Tuning molecular structures and postprocessing technologies have always been utilized to improve the intermolecular stacking in organic semiconductor fields; solvent vapor annealing technology is likely to become the most promising option because it can select the appropriate solvent according to the characteristics of the molecular structure to optimize the intermolecular orderly arrangement. Herein, a new small molecule TEG-ID(TPCN)2 with a hydrophilic TEG chain was designed and applied as an active layer of… Show more

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Cited by 4 publications
(4 citation statements)
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“…In Figure c,f, the log­( I )–log­( V ) curves were also plotted to investigate the conductance switching of the memory behavior. A good linear relationship of log­( I ) ∝ log­( V ) 1.2 at the LCS of the Flash-type memory device indicated Ohmic conduction due to the higher thermally released charge carrier density. When the device stayed at HCS under a higher voltage bias, the conducting behavior transformed to trap-filled limited transport, demonstrating a space charge-limited current (SCLC) transport model. Upon the device undergoing the second sweeping, Poole–Frenkel emission dominated the carrier transport with log­( I ) ∝ log­( V ) 1.0 .…”
Section: Results and Discussionmentioning
confidence: 98%
“…In Figure c,f, the log­( I )–log­( V ) curves were also plotted to investigate the conductance switching of the memory behavior. A good linear relationship of log­( I ) ∝ log­( V ) 1.2 at the LCS of the Flash-type memory device indicated Ohmic conduction due to the higher thermally released charge carrier density. When the device stayed at HCS under a higher voltage bias, the conducting behavior transformed to trap-filled limited transport, demonstrating a space charge-limited current (SCLC) transport model. Upon the device undergoing the second sweeping, Poole–Frenkel emission dominated the carrier transport with log­( I ) ∝ log­( V ) 1.0 .…”
Section: Results and Discussionmentioning
confidence: 98%
“…[ 26 ] Then, the samples were subjected to solvent vapor annealing (SVA), which provided an extra driving force for molecular reassembly to amplify the influence of nucleation behavior on the film growth. [ 27 ] As shown in Figure S8, Supporting Information, the pristine L8‐BO film exhibited a small number of large‐sized crystals, whereas the BTO‐BO film showed numerous tiny crystals. This significant difference confirms that the heterogeneous nucleating agent (BTO‐BO) can trigger a high nucleation density, which exceeds that of L8‐BO, because of the increase in the number of nucleation sites.…”
Section: Resultsmentioning
confidence: 99%
“…1e and Supplementary discussion 3, ESI †). 39 Evidently, the film processed at a low evaporation rate (8.5 mm d À1 ) exhibits a small number of large-sized crystals, which are possibly formed because of severe molecular aggregation. In contrast, the film processed at a high evaporation rate (16.8 mm d À1 ) exhibits numerous tiny-size crystals.…”
Section: Dtl Mamentioning
confidence: 99%