2020
DOI: 10.1021/acsami.0c02749
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Solvent Vapor-Assisted Magnetic Manipulation of Molecular Orientation and Carrier Transport of Semiconducting Polymers

Abstract: Effective control of the molecular orientation and the degree of ordering in organic semiconductors is important to achieve high-performance organic electronics. Herein, we have successfully achieved highly oriented films in centimeter scale for a naphthalenedicarboximide-based semiconducting polymer (P­(NDI2OD-T2)) by solvent vapor annealing (SVA) of precast films under a high magnetic field (HMF). As revealed by the microstructural studies, the SVA-HMF films exhibit a remarkably higher degree of chain alignm… Show more

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Cited by 11 publications
(26 citation statements)
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“…The weaken chain aggregation indicates that some amounts of the crystallinities within the as-spun dry film are partially destructed and broken into smaller-size chain aggregates, which also leads to reduced chain entanglement and viscosity of the CF-swollen film. Thus, it further evidences the aggregate-triggered alignment mechanism for the SVA-HMF process proposed previously, 21 via which the alignment process of the P(NDI2OD-T2) films is schematically shown in Fig. 6c.…”
Section: Resultssupporting
confidence: 83%
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“…The weaken chain aggregation indicates that some amounts of the crystallinities within the as-spun dry film are partially destructed and broken into smaller-size chain aggregates, which also leads to reduced chain entanglement and viscosity of the CF-swollen film. Thus, it further evidences the aggregate-triggered alignment mechanism for the SVA-HMF process proposed previously, 21 via which the alignment process of the P(NDI2OD-T2) films is schematically shown in Fig. 6c.…”
Section: Resultssupporting
confidence: 83%
“…1c, revealing the high alignment of the P(NDI2OD-T2) chains. Notably, in contrast to the “wet” polymer films as-spun from the high- T b DCB as reported previously, 21 the “dry films” spun from low- T b solutions were employed in the SVA-HMF process in present cases. This indicates that the high vapor pressure of the lower- T b solvents ( e.g.…”
Section: Resultsmentioning
confidence: 99%
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“…To determine the crystallinity and molecular packing properties of the highly textured films in the out-of-plane direction, synchrotron radiation X-ray diffraction under specular reflection conditions (SR-XRD) was performed. The SR-XRD curves (Figure b) of films prepared without magnetic alignment and those prepared with static magnetic alignment show obvious (200) and (010) peaks in the out-of-plane direction, which correspond to d -spacing values of 2.44 and 0.39 nm for lamellar stacking and π–π stacking, respectively. ,, These results confirm that face-on and edge-on crystalline domains were mixed in the solid film, which is consistent with previous reports. ,, Notably, the intensity of (010) diffraction peaks of the two films are nearly identical, suggesting the static magnetic field did not obviously affect the molecular planar alignment in the out-of-plane direction. However, for the HR-HMF alignment films, the (200) diffraction peak disappears, accompanied by a gradual increase in intensity of the (010) diffraction peaks, indicating that the HR-HMF alignment process inhibited the edge-on packing and promoted the face-on packing in the P­(NDI2OD-T2) films; that is, the process can effectively enhance the degree of face-on molecular packing.…”
supporting
confidence: 89%
“…To address the above challenges, extensive efforts have been devoted to constructing oriented conjugated polymer lms with strengthening intermolecular interactions through a variety of alignment processes, such as capillary action [12], nanogroove-guided [13], magnetic force-induced [14], directed self-assembly [15][16][17] and others [18,19]. Despite high charge mobility of polymer-based transistors have been obtained through above processing methods, they all need the external directional force guidance to achieve aligned crystalline thin lms, rendering the process more complicated.…”
Section: Introductionmentioning
confidence: 99%