Solvothermal growth of ZnO

Determination of secondary ion mass spectrometry relative sensitivity factors for polar and non-polar ZnO

“…Due to the dimension of the a-plane ZnO substrate, a large area parallel to the c-axis of the ZnO ingot is covered. Figure 3 illustrates the impurity concentrations, which differ in our results (Figure 2) or showed strong position dependence referred to the c-axis as reported by Ehrentraut et al 9 It is immediately obvious that there is no gradient in impurity concentration observable along the surface.…”

“…Such a dependence of impurity incorporation also has been observed by Ehrentraut et al 9 and Ohshima et al 11 Several sources are imaginable. First, impurities in the aqueous solution of the hydrothermal growth process may be incorporated differently according to the surface termination of the ZnO crystal.…”

“…ppm according to the mass (e.g., $ Â10 for Li, $ Â3 for Al). The lowest impurity concentrations have been found by Ehrentraut et al 9 and Ohshima et al 11 in ZnO substrates originating from the þc region. Our lowest concentrations are comparable with these results.…”

“…[9][10][11][12] Only the concentrations for lithium, potassium, aluminum, and iron have been measured by all groups. The large discrepancy of the values (Table III) may be attributed in parts to the use of different units (wt.…”

Development of 2" AlN Substrates Using SiC Seeds

“…Hundreds of different compounds are grown by the hydrothermal method, some of them at ambient conditions such as aluminum potassium sulfate and potassium dihydrogen sulfate (KDP). Hydrothermal growth of the low-defect ZnO crystals requires a high oxygen overpressure (about 50 atm) (Nause & Nemeth, 2005), but thus far remains a unique example of the industrial growth of widebandgap semiconductors by the solvothermal method (Ehrentraut et al, 2006). In solvothermal method a liquid polar solvent (water in hydrothermal and ammonia in ammonothermal growth) forms metastable intermediate products with the solute (nutrient).…”