2013
DOI: 10.1021/sc3000477
|View full text |Cite
|
Sign up to set email alerts
|

Solvothermal Synthesis of Cu3BiS3 Enabled by Precursor Complexing

Abstract: Copper bismuth sulfide, Cu 3 BiS 3 , has been prepared by a solvothermal method that relies on precursor complexing to achieve the desired ternary chalcogenide preferentially over possible binary sulfides in the system. The complexing agent L-cystine also simultaneously donates sulfur to the compound when the complexes are dissociated at a single temperature. This low temperature and use of nitrate salts instead of the commonly employed but less "green" chloride salts provide a path toward cleaner methods. The… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

1
8
0

Year Published

2014
2014
2020
2020

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 30 publications
(13 citation statements)
references
References 26 publications
1
8
0
Order By: Relevance
“…This is reported for CuSbS 2 (CuCl 2 -2H 2 O, potassium antimonyl tartratetrihydrate, elemental sulfur, and diethylenetriamine) 189 and Cu 3 BiS 3 (from nitrates and L-cystine). 190,191 This method is more often used for nanoparticles.…”
Section: Solvothermal Growthmentioning
confidence: 99%
“…This is reported for CuSbS 2 (CuCl 2 -2H 2 O, potassium antimonyl tartratetrihydrate, elemental sulfur, and diethylenetriamine) 189 and Cu 3 BiS 3 (from nitrates and L-cystine). 190,191 This method is more often used for nanoparticles.…”
Section: Solvothermal Growthmentioning
confidence: 99%
“…The whole solution was sealed into a Teflon-lined stainlesssteel autoclave and maintained at 180°C for 12 h. The XRD pattern of Cu 3 BiS 3 showed the formation of wittichenite orthorhombic phase. The stoichiometric ratio and band gap of Cu 3 BiS 3 thin films was reported 42:12:44 and [40]. For the preparation of Cu 3 BiS 3 , firstly 3 mM Cu(NO 3 ) 2 Á3H 2 O and 3 mM L-cystein was dissolved in 50 mL EG, and then 1 mL Bi(NO 3 ) 3 Á5H 2 O with 1 mM L-cystein was dissolved in separate 50 mL EG with stirring.…”
Section: Solvothermal Synthesis Techniquementioning
confidence: 99%
“…Synthesis of Cu 3 BiS 3 involve the solution methods [5][6][7][8][9][10][11] and combining the chemical bath deposition 12 and sputtering process 13,14 besides Cu 3 BiS 3 thin films have a forbidden band gap of about 1.4 eV, an optimum for photo energy conversion. Co-evaporated thin films show good structural and optical properties.…”
Section: Introductionmentioning
confidence: 99%