Solvothermal Synthesis of Nanocrystalline III-V Semiconductors

Abstract

A simple, convenient approach to III–V semiconducting nanocrystallitesis described—the solvothermal method. Similar to the hydrothermal method, except that organic solvents are used instead of water, this method is reported to effectively prevent oxidation of the products. Materials such as 12 nm InP, 32 nm GaN, and 12 nm InAs can be prepared via this method, resulting in crystalline materials that do not need post‐treatment at high temperatures. In addition, organometallic precursors are not required.

A New Class of Nanostructured Inorganic–Organic Hybrid Semiconductors Based on II–VI Binary Compounds

“…The method has emerged in recent years as one of the most powerful crystal growth techniques and received tremendous interests in synthetic chemistry and materials science (131)(132)(133)(135)(136)(137)(138)(139)(140)(141). A great number of solid-state compounds [e.g., metal chalcogenides (130,(141)(142)(143)(144), phosphides (145)(146)(147)(148)(149)(150)(151)(152)(153), metal nitrides (141,(154)(155)(156)(157), and interesting metastable phases (157)(158)(159)(160)(161)(162)(163)(164)], have been produced by employing this technique. Its potential in solid-state chemistry has been well reviewed (129,133,150,158,159,(165)(166)(167)(168)…”

Synthesis of Semiconducting Functional Materials in Solution: From II‐VI Semiconductor to Inorganic–Organic Hybrid Semiconductor Nanomaterials

“…[84,85] One outstanding characteristic of solvothermal/hydrothermal strategies is that, especially when the starting precursors are exposed to special conditions, often in pure solvent, some quite unexpected reactions will take place, accompanied with the formation of nanoscopic morphologies and new phases, which cannot be achieved by traditional reactions. There are also some review articles provide a brief overview of the current studies on the synthesis methods for semiconductor nanomaterials by solvothermal approach, [86][87][88] thus, these examples will be not included here.…”

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

“…In the present study, we explore the use of surfactant (sulfur) for the CVD growth of NWs in order to achieve very thin GaSb NWs with the diameter down to 20 nm. In contrast to the surfactant effect typically reported in the liquid phase [22][23][24][25][26][27] (for example, solvothermal and hydrothermal) and thin-film technologies 28 , the sulfur atoms, commonly used for the surface passivation of III-V semiconductors [29][30][31][32] , are contributed to form S-Sb bonds on the as-grown NW surface, effectively stabilizing the sidewalls and thus minimizing the unintentional radial growth. Importantly, the obtained NWs are highly stoichiometric, single-crystalline with a smooth surface and very uniform in diameter without any tapering.…”