2009
DOI: 10.1016/j.jallcom.2008.09.170
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Some applications of the bond valence model to transition metal chalcogenides

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Cited by 6 publications
(4 citation statements)
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“…The Auger parameter represents a value of 1849.9 eV from the numerical sum of the Cu 2p 3/2 line and the Cu LMM line (917.7 eV), suggesting the monovalence state of copper, i.e., Cu(I). 24,26 Fig. 2a shows the UV-vis absorption spectrum of the assynthesized KCu 3 S 2 microbelts which increases dramatically when the incident photon energy exceeds 1.6 eV.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The Auger parameter represents a value of 1849.9 eV from the numerical sum of the Cu 2p 3/2 line and the Cu LMM line (917.7 eV), suggesting the monovalence state of copper, i.e., Cu(I). 24,26 Fig. 2a shows the UV-vis absorption spectrum of the assynthesized KCu 3 S 2 microbelts which increases dramatically when the incident photon energy exceeds 1.6 eV.…”
Section: Resultsmentioning
confidence: 99%
“…22 Low temperature phase transitions and resistivity anomalies were observed in the K 3 Cu 8 S 6 and KCu 7 S 4 phases, which were reported to originate from an order-disorder transition of the Cu + ions in the structure. 23,24 However, to the best of our knowledge, only a few researches on the K-Cu-S quasi 1D micro/nanostructures have been reported. 25 The reason may be the difficulty to obtain a purephase sample with the micro/nanostructures.…”
Section: Introductionmentioning
confidence: 99%
“…To date, semiconductors with different morphologies are promising for quantum confinement effect studies and important candidates for potential sensor, solar cell applications and nanometer-scale switches [1][2][3][4][5][6][7]. In this field, the assembly of nano-scale building blocks into hierarchical and complex nanostructures and porous structures has become the focus of many studies because it offers opportunities in the search for exciting new properties of semiconductor materials and helps to fabricate functional micro-and nano-devices, catalysts, drug-carriers, etc.…”
Section: Introductionmentioning
confidence: 99%
“…Whangbo and co-workers reported that the resistivity anomalies of K 3 Cu 8 S 6 and KCu 7 S 4 at low temperature do not originate from charge density wave instability, but are caused by an order-disorder transition of the Cu + ions in the structure [10,11]. Hwu and coworkers proposed a one-dimensional diffusive ordering model that indicates that the phase transition is caused by vacancy ordering involving Cu + ion diffusion along the Cu(2)-Cu(2) zigzag chains.…”
Section: Introductionmentioning
confidence: 99%